Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
MMUN2135LT1G

MMUN2135LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 50V SOT23

7834

DTA144GUAT106

DTA144GUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

2425

MMUN2113LT3G

MMUN2113LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 50V SOT23-3

1843570000

RN2111MFV,L3F

RN2111MFV,L3F

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS PNP 50V 0.1A VESM

0

DDTD114GU-7-F

DDTD114GU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

0

DTC143XU3T106

DTC143XU3T106

ROHM Semiconductor

DTC143XU3 IS AN DIGITAL TRANSIST

0

PDTA124ET,215

PDTA124ET,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

2614

MMUN2136LT1G

MMUN2136LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 246MW SOT23-3

336000

DDTC144ECA-7-F

DDTC144ECA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

4880

DDTC143XCA-7-F

DDTC143XCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

77162

RN1415,LF

RN1415,LF

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS NPN 50V 0.1A SMINI

6000

DDTD114EU-7-F

DDTD114EU-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT323

0

DTA114ECAHZGT116

DTA114ECAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

11940

DTC144TUAT106

DTC144TUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

2476

DTC044TUBTL

DTC044TUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.2W UMT3F

3000

DTC114YUBHZGTL

DTC114YUBHZGTL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (WITH BUI

5214

PDTA123YM,315

PDTA123YM,315

Nexperia

TRANS PREBIAS PNP 50V DFN1006-3

0

NSBA114YF3T5G

NSBA114YF3T5G

SMALL SIGNAL BIPOLAR TRANSISTOR,

456000

DRA3115G0L

DRA3115G0L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

10000

DTC115EU3HZGT106

DTC115EU3HZGT106

ROHM Semiconductor

DTC115EU3HZG IS AN DIGITAL TRANS

2875

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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