NP109N04PUG-E1-AY

Manufacturer Part NP109N04PUG-E1-AY
Manufacturer Renesas Electronics America
Description MOSFET N-CH 40V 110A TO263-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet NP109N04PUG-E1-AY PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 07 - Dec 11 2025
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15750 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 220W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
NP109N04PUG-E1-AY
NP109N04PUG-E1-AY
Renesas Electronics America NP109N04PUG-E1-AY is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
NP109N04PUG-E1-AY PDF
Same Series
NP109N04PUK-E1-AY
NP109N04PUK-E1-AY
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