| Manufacturer Part | MT53E256M32D2DS-046 AAT:B |
|---|---|
| Manufacturer | Micron Technology |
| Description | IC DRAM 8GBIT 2.133GHZ 200WFBGA |
| Category | Integrated Circuits Supplier | Global Semiconductor Distributor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Availability | 0 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 09 - Dec 13 2025 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q100 |
| Package: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 8Gb (256M x 32) |
| Memory Interface: | - |
| Clock Frequency: | 2.133 GHz |
| Write Cycle Time - Word, Page: | - |
| Access Time: | - |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -40°C ~ 105°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 200-WFBGA |
| Supplier Device Package: | 200-WFBGA (10x14.5) |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
MOSFET 2N-CH 10.6V 8DIP
IC DRAM 8GBIT 2.133GHZ 200WFBGA
AC REACTOR 11 TO 15KW 400V
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