FF200R12KE3B2HOSA1

Manufacturer Part FF200R12KE3B2HOSA1
Manufacturer IR (Infineon Technologies)
Description IGBT MOD 1200V 295A 1050W
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 14 - Dec 18 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):295 A
Power - Max:1050 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 200A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:14 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-40°C ~ 125°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
FF200R12KE3B2HOSA1
FF200R12KE3B2HOSA1
IR (Infineon Technologies) FF200R12KE3B2HOSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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