NGTB25N120FL2WG

Manufacturer Part NGTB25N120FL2WG
Manufacturer
Description INSULATED GATE BIPOLAR TRANSISTO
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet NGTB25N120FL2WG PDF
Availability 1822 pieces
Shipped from HK warehouse
Expected Shipping Dec 10 - Dec 14 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):50 A
Current - Collector Pulsed (Icm):100 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 25A
Power - Max:385 W
Switching Energy:1.95mJ (on), 600µJ (off)
Input Type:Standard
Gate Charge:178 nC
Td (on/off) @ 25°C:87ns/179ns
Test Condition:600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr):154 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
More Information
NGTB25N120FL2WG
NGTB25N120FL2WG
NGTB25N120FL2WG is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
NGTB25N120FL2WG PDF
Same Series
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NGTB10N60R2DT4G
INSULATED GATE BIPOLAR TRANSISTO
NGTB40N120FLWG
NGTB40N120FLWG
IGBT, 80A, 1200V, N-CHANNEL
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Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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