NGTB10N60R2DT4G

Manufacturer Part NGTB10N60R2DT4G
Manufacturer
Description INSULATED GATE BIPOLAR TRANSISTO
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet NGTB10N60R2DT4G PDF
Availability 2630 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 10A
Power - Max:72 W
Switching Energy:412µJ (on), 140µJ (off)
Input Type:Standard
Gate Charge:53 nC
Td (on/off) @ 25°C:48ns/120ns
Test Condition:300V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr):90 ns
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
More Information
NGTB10N60R2DT4G
NGTB10N60R2DT4G
NGTB10N60R2DT4G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
NGTB10N60R2DT4G PDF
Same Series
NGTB10N60R2DT4G
NGTB10N60R2DT4G
INSULATED GATE BIPOLAR TRANSISTO
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NGTB40N120FLWG
IGBT, 80A, 1200V, N-CHANNEL
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Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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