TK30E06N1,S1X Toshiba Electronic Devices and Storage Corporation TK30E06N1,S1X inventory, pricing, datasheet

Manufacturer Part	TK30E06N1,S1X
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Description	MOSFET N-CH 60V 43A TO220
Category	Discrete Semiconductor \| Diodes, Transistor, electronic component–Ample Chip
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	TK30E06N1,S1X PDF
Availability	2 pieces
Shipped from	HK warehouse
Expected Shipping	Dec 09 - Dec 13 2025

Product Attributes

Type	Description
Series:	U-MOSVIII-H
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	43A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	16 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1050 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	53W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220
Package / Case:	TO-220-3

More Information

TK30E06N1,S1X

Toshiba Electronic Devices and Storage Corporation TK30E06N1,S1X is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.