RM2N650IP

Manufacturer Part RM2N650IP
Manufacturer Rectron USA
Description MOSFET N-CHANNEL 650V 2A TO251
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 50 V
FET Feature:-
Power Dissipation (Max):23W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Stub Leads, IPak
More Information
RM2N650IP
RM2N650IP
Rectron USA RM2N650IP is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
RM2N650LD
RM2N650LD
MOSFET N-CHANNEL 650V 2A TO252-2
Rectron USA
RM2N650IP
RM2N650IP
MOSFET N-CHANNEL 650V 2A TO251
Rectron USA
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