SQV120N06-4M7L_GE3

Manufacturer Part SQV120N06-4M7L_GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 60V 120A TO262-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SQV120N06-4M7L_GE3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
More Information
SQV120N06-4M7L_GE3
SQV120N06-4M7L_GE3
Vishay / Siliconix SQV120N06-4M7L_GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SQV120N06-4M7L_GE3 PDF
Same Series
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SQV120N06-4M7L_GE3
SQV120N06-4M7L_GE3
MOSFET N-CH 60V 120A TO262-3
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