FQB6N80TM

Manufacturer Part FQB6N80TM
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description MOSFET N-CH 800V 5.8A D2PAK
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet FQB6N80TM PDF
Availability 267 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 158W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
FQB6N80TM
FQB6N80TM
Sanyo Semiconductor/ON Semiconductor FQB6N80TM is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
FQB6N80TM PDF
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