TPW4R008NH,L1Q Toshiba Electronic Devices and Storage Corporation TPW4R008NH,L1Q inventory, pricing, datasheet

Manufacturer Part	TPW4R008NH,L1Q
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Description	MOSFET N-CH 80V 116A 8DSOP
Category	Discrete Semiconductor \| Diodes, Transistor, electronic component–Ample Chip
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	TPW4R008NH,L1Q PDF
Availability	953 pieces
Shipped from	HK warehouse
Expected Shipping	Dec 08 - Dec 12 2025

Product Attributes

Type	Description
Series:	U-MOSVIII-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	116A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	59 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5300 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	800mW (Ta), 142W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-DSOP Advance
Package / Case:	8-PowerVDFN

More Information

TPW4R008NH,L1Q

Toshiba Electronic Devices and Storage Corporation TPW4R008NH,L1Q is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.