SIHP30N60E-GE3

Manufacturer Part SIHP30N60E-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 600V 29A TO220AB
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIHP30N60E-GE3 PDF
Availability 824 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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Product Attributes
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 100 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:-
Package / Case:TO-220-3
More Information
SIHP30N60E-GE3
SIHP30N60E-GE3
Vishay / Siliconix SIHP30N60E-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIHP30N60E-GE3 PDF
Same Series
SIHP080N60E-GE3
SIHP080N60E-GE3
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