SIR618DP-T1-GE3

Manufacturer Part SIR618DP-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 200V 14.2A PPAK SO-8
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIR618DP-T1-GE3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 11 - Dec 15 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:ThunderFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:14.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:95mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 7.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 100 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
More Information
SIR618DP-T1-GE3
SIR618DP-T1-GE3
Vishay / Siliconix SIR618DP-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIR618DP-T1-GE3 PDF
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