IPB019N08N3GATMA1

Manufacturer Part IPB019N08N3GATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 80V 180A TO263-7
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPB019N08N3GATMA1 PDF
Availability 9881 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:206 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14200 pF @ 40 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
More Information
IPB019N08N3GATMA1
IPB019N08N3GATMA1
IR (Infineon Technologies) IPB019N08N3GATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPB019N08N3GATMA1 PDF
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