FQU2N100TU

Manufacturer Part FQU2N100TU
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description MOSFET N-CH 1000V 1.6A IPAK
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet FQU2N100TU PDF
Availability 1147 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
More Information
FQU2N100TU
FQU2N100TU
Sanyo Semiconductor/ON Semiconductor FQU2N100TU is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
FQU2N100TU PDF
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