Pulse Transformers

Image Part Number Description / PDF Quantity Rfq
H68056NLT

H68056NLT

PulseLarsen Antenna

IC CHIP

0

B1051

B1051

PulseLarsen Antenna

IC CHIP

0

PE-65507MQNL

PE-65507MQNL

PulseLarsen Antenna

IC CHIP

0

TX1318NLT

TX1318NLT

PulseLarsen Antenna

TRANSFORMER SMD

0

LT6032

LT6032

PulseLarsen Antenna

TRANSFORMER

0

BX2305H

BX2305H

PulseLarsen Antenna

IC CHIP

0

BX4053T

BX4053T

PulseLarsen Antenna

IC CHIP

0

TX7017NL

TX7017NL

PulseLarsen Antenna

IC CHIP

0

BX2262T

BX2262T

PulseLarsen Antenna

IC CHIP

0

PE-68643NL

PE-68643NL

PulseLarsen Antenna

IC CHIP

0

HX6903NL

HX6903NL

PulseLarsen Antenna

TRANSFORMER SMD

0

BX1137LT

BX1137LT

PulseLarsen Antenna

IC CHIP

0

E2001QNLT

E2001QNLT

PulseLarsen Antenna

MODULE 10BASE-T INTRFACE 1:1 SMD

0

H5143ANL

H5143ANL

PulseLarsen Antenna

IC CHIP

0

T1094NLST

T1094NLST

PulseLarsen Antenna

TRANSFORMER

0

PE-68626NLT

PE-68626NLT

PulseLarsen Antenna

IC CHIP

0

TX1511QNLT

TX1511QNLT

PulseLarsen Antenna

IC CHIP

0

B2232NLS

B2232NLS

PulseLarsen Antenna

IC CHIP

0

BX2542LBT

BX2542LBT

PulseLarsen Antenna

IC CHIP

0

TX1280T

TX1280T

PulseLarsen Antenna

IC CHIP

0

Pulse Transformers

1. Overview

Pulse transformers are specialized electromagnetic devices designed to transfer electrical pulse signals between circuits while maintaining galvanic isolation. They play a critical role in modern electronics by enabling efficient signal transmission, voltage level conversion, and noise suppression. Their unique ability to handle fast transient signals makes them essential in power electronics, telecommunications, and industrial control systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Signal Pulse TransformerHigh bandwidth, fast rise time (ns level), low distortionDigital communication interfaces (RS485, Ethernet)
Power Pulse TransformerHigh voltage isolation (>1kV), high efficiency (>90%)Switch-mode power supplies (SMPS), motor drives
High-Voltage Pulse TransformerMulti-kV insulation, partial discharge resistanceX-ray generators, radar systems
Wideband Pulse TransformerFrequency range: 100kHz-100MHz, flat response curveRF amplifiers, test equipment

3. Structure and Components

Typical construction includes:

  • Primary/secondary windings: Enamelled copper wire with precise turn ratio
  • Magnetic core: Ferrite (high permeability), powdered iron (high saturation)
  • Insulation system: Multi-layer dielectric barriers, vacuum pressure impregnation
  • Termination: Surface-mount pads or through-hole pins

Advanced designs use planar transformers with PCB-integrated windings for improved thermal management.

4. Key Technical Parameters

ParameterTypical RangeImportance
Turns Ratio1:1 to 1:100Voltage scaling accuracy
Frequency Range100kHz-10MHzSignal integrity maintenance
Isolation Voltage500V-30kVSafety compliance (UL/IEC)
Pulse Rise Time1ns-50nsDigital signal fidelity
Leakage Inductance<1 HEfficiency optimization

5. Application Fields

  • Power Electronics: Isolated gate drivers for IGBT/MOSFET
  • Telecommunications: DSL line interface units
  • Medical Equipment: Patient-isolated monitoring systems
  • Industrial Control: PLC signal transmission
  • Automotive: EV battery management system (BMS) isolation

Case Study: In electric vehicle chargers, pulse transformers enable 1500V isolation between grid and battery systems while maintaining 98% signal integrity at 2MHz switching frequency.

6. Leading Manufacturers

ManufacturerKey Product SeriesSpecifications
CoilcraftPulse-Hi Series1:1.4 ratio, 25kV isolation, 100MHz bandwidth
Pulse ElectronicsPA1538NL1:16 ratio, 3kV isolation, 100ns rise time
TDK-LambdaCUT1002.5kV isolation, 2MHz frequency, SMD package

7. Selection Guidelines

Key considerations:

  • Match turns ratio with driver/receiver voltage requirements
  • Verify insulation class against system safety standards
  • Check frequency response vs. signal bandwidth requirements
  • Consider thermal rating for continuous power operation
  • Evaluate PCB footprint constraints (through-hole vs SMD)

8. Industry Trends

Current development directions include:

  • Miniaturization through nanocrystalline core materials
  • Integration with EMI filtering components
  • Increased operating frequencies (>10MHz) for 5G infrastructure
  • SiC/GaN compatible designs for wide bandgap power devices
  • Automotive-grade models for 800V EV systems
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