Optical Sensors - Photonics - Counters, Detectors, SPCM (Single Photon Counting Module)

Image	Part Number	Description / PDF	Quantity	Rfq
	LYNX-A-33-A50-T1-A Excelitas Technologies	MODULE SILICON PHOTOMULTIPLIER	0
	LYNX-A-33-050-T1-B Excelitas Technologies	MODULE PHOTOMULTIPLIER SILICON	0
	LYNX-A-33-A50-T1-B Excelitas Technologies	MODULE SILICON PHOTOMULTIPLIER	0

Image

Part Number

Description / PDF

Quantity

Rfq

LYNX-A-33-A50-T1-A

Excelitas Technologies

MODULE SILICON PHOTOMULTIPLIER

LYNX-A-33-050-T1-B

Excelitas Technologies

MODULE PHOTOMULTIPLIER SILICON

LYNX-A-33-A50-T1-B

Excelitas Technologies

MODULE SILICON PHOTOMULTIPLIER

Optical Sensors - Photonics - Counters, Detectors, SPCM (Single Photon Counting Module)

1. Overview

Single Photon Counting Modules (SPCMs) are advanced optical sensors designed to detect individual photons with high temporal and spatial resolution. Based on solid-state photodetectors, these modules operate in Geiger mode to achieve single-photon sensitivity. Their ability to quantify ultralow light levels makes them critical components in quantum optics, biomedical imaging, and precision measurement systems.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Avalanche Photodiode (APD) SPCM	High quantum efficiency (40-70%), active/passive quenching circuits	LIDAR, fluorescence spectroscopy
Superconducting Nanowire SPCM	Ultra-low dark count rate (<1 Hz), wide spectral range (400-1700 nm)	Quantum communication, deep-space optical receivers
Photomultiplier Tube (PMT) SPCM	High gain (10^6-10^7), large active area	Astronomy, nuclear physics experiments

3. Structure and Components

Typical SPCM architecture consists of: (1) Photon detection layer (silicon APD, superconducting nanowire); (2) Quenching circuitry (RC-active/passive); (3) Signal amplification stage; (4) Temperature stabilization module; (5) Digital output interface (TTL/USB). Advanced modules integrate time-to-digital converters for photon arrival time tagging.

4. Key Technical Specifications

Parameter	Definition	Typical Values
Photon Detection Efficiency (PDE)	Ratio of detected photons to incident photons	10-90% (wavelength-dependent)
Dark Count Rate (DCR)	False counts without photon incidence	100 Hz - 10 kHz (at 25 C)
Timing Jitter	Temporal uncertainty in photon detection	20-200 ps RMS
Dead Time	Recovery time between detections	50 ns - 10 s

5. Application Fields

Quantum Communication: QKD systems (e.g., ID Quantique Clavis3)
Biophotonics: Single-molecule fluorescence detection
Environmental Monitoring: LIDAR systems for atmospheric particle analysis
Industrial Metrology: Precision thickness measurement in semiconductor manufacturing

6. Leading Manufacturers and Products

Manufacturer	Product Model	Key Features
Excelitas Technologies	SIR5-FC	Silicon APD, 60% PDE at 550 nm, 10 ns dead time
Hamamatsu Photonics	C14456-002	Back-illuminated APD, 70% max PDE, thermoelectric cooling
Laser Components	SPCM-9	1550 nm optimized, 25% PDE, fiber-coupled interface

7. Selection Recommendations

Match spectral response range to application wavelength
Balance PDE requirements with acceptable DCR levels
Consider cooling requirements for noise-sensitive applications
Evaluate timing resolution needs against system integration complexity

8. Industry Trends

Current developments focus on: (1) Increasing PDE beyond 90% through nanostructured surfaces; (2) Reducing dark counts to sub-Hz levels via cryogenic operation; (3) Developing CMOS-compatible single-photon imagers; (4) Integrating quantum dot photon number resolving capabilities. Market growth is driven by quantum computing infrastructure and autonomous vehicle LIDAR systems.