Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
OP905

OP905

TT Electronics / Optek Technology

SENSOR PHOTODIODE 850NM T-1

1116

OPR5011T

OPR5011T

TT Electronics / Optek Technology

SENSOR REFLECTIVE SMCC

0

OP993

OP993

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM TO18

424

OPR5925

OPR5925

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM SMD

95

OPR5913

OPR5913

TT Electronics / Optek Technology

SENSOR PHOTODIODE 880NM

0

OPR5911

OPR5911

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM SMD

0

OP950

OP950

TT Electronics / Optek Technology

SENSOR PHOTODIODE 935NM SIDE

1934

OPR2100

OPR2100

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM SMD

355

OP900SL

OP900SL

TT Electronics / Optek Technology

SENSOR PHOTODIODE 850NM

0

OPF472

OPF472

TT Electronics / Optek Technology

SENSOR PHOTODIODE 880NM TO18

95

OPR2100T

OPR2100T

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM SMCC

225

OP906

OP906

TT Electronics / Optek Technology

SENSOR PHOTODIODE 935NM

337

OPR2100HST

OPR2100HST

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM SMCC

0

OPF422

OPF422

TT Electronics / Optek Technology

SENSOR PHOTODIODE 880NM TO46

3247

OP954

OP954

TT Electronics / Optek Technology

SENSOR PHOTODIODE 850NM SIDE

1461

OPF430

OPF430

TT Electronics / Optek Technology

SENSOR PHOTODIODE 860NM TO46

114

OP999

OP999

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM

5201

OP913SL

OP913SL

TT Electronics / Optek Technology

SENSOR PHOTODIODE 900NM TO5-2

234

OP955

OP955

TT Electronics / Optek Technology

SENSOR PHOTODIODE 935NM SIDE

0

OP913WSL

OP913WSL

TT Electronics / Optek Technology

SENSOR PHOTODIODE 900NM TO5-2

343

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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