Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
GUVV-S10SD

GUVV-S10SD

Genicom

UV-A SENSOR (240-395NM)

1589

GUVV-C20SD

GUVV-C20SD

Genicom

UV-A SENSOR (240-395NM)

2682

GUVB-C21SD

GUVB-C21SD

Genicom

UV-B SENSOR COB2418 (240-320NM)

2742

GUVB-T11GM-LA

GUVB-T11GM-LA

Genicom

UV SENSOR MODULE UV-B

17

GUVA-S12SD

GUVA-S12SD

Genicom

UV-A SENSOR (240-370) /SMD3528

2014

GUVB-C31SM

GUVB-C31SM

Genicom

DIGITAL UV SENSOR / COB2023

2242

GUVC-S40GD

GUVC-S40GD

Genicom

UV-C SENSOR (220-280NM)

1926

GUVA-C22SD

GUVA-C22SD

Genicom

UV-A SENSOR / COB2418 (2.4 X 1.8

2414

GUVA-T21GD-U

GUVA-T21GD-U

Genicom

UV-A SENSOR (220-370NM)

0

GUVC-T21GH

GUVC-T21GH

Genicom

UV-C SENSOR (220-280NM)

1215

GUVB-T21GH

GUVB-T21GH

Genicom

UV-B SENSOR (220-320NM)

163

GUVB-T21GD-U

GUVB-T21GD-U

Genicom

UV-B SENSOR (220-320NM)

44

GUVCL-S10GD

GUVCL-S10GD

Genicom

UV-C LED SENSOR (230-320) /SMD3

21

GUVA-T11GD

GUVA-T11GD

Genicom

UV-A SENSOR (220-370NM)

692

GUVA-C32SM

GUVA-C32SM

Genicom

DIGITAL UV SENSOR / COB2023

2717

GUVB-S31GD

GUVB-S31GD

Genicom

UV-B SENSOR (220-320NM)

2159

GUVC-S10GD

GUVC-S10GD

Genicom

UV-C SENSOR (220-280NM)

2611

GVBL-S12SD

GVBL-S12SD

Genicom

UV / VISIBLE SENSOR (345-450)

1954

GUVC-T10GM-LA

GUVC-T10GM-LA

Genicom

UV SENSOR MODULE UV-C

46

GUVC-T20GD-U

GUVC-T20GD-U

Genicom

UV-C SENSOR (220-280NM)

32

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

RFQ BOM Call Skype Email
Top