Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
CLS15-22C/L213G/TR8

CLS15-22C/L213G/TR8

Everlight Electronics

SENSOR PHOTODIODE 550NM 4SMD

0

EAPDLP03RDAA0

EAPDLP03RDAA0

Everlight Electronics

SENSOR PHOTODIODE 940NM RADIAL

0

ALS-PD70-01C/TR7

ALS-PD70-01C/TR7

Everlight Electronics

SENSOR PHOTODIODE 630NM

0

EAPDLP04SCAA1

EAPDLP04SCAA1

Everlight Electronics

SENSOR PHOTODIODE 940NM RADIAL

0

EAPDLP05RDDA1

EAPDLP05RDDA1

Everlight Electronics

SENSOR PHOTODIODE 940NM RADIAL

0

EAPDLP04SCAA3

EAPDLP04SCAA3

Everlight Electronics

SENSOR PHOTODIODE 940NM RADIAL

0

CLS15-22C/L213B/TR8

CLS15-22C/L213B/TR8

Everlight Electronics

SENSOR PHOTODIODE 470NM 4SMD

0

EAPDSZ4439A1

EAPDSZ4439A1

Everlight Electronics

SENSOR PHOTODIODE 940NM 2SMD GW

0

EAPDLP04SCAA4

EAPDLP04SCAA4

Everlight Electronics

SENSOR PHOTODIODE 940NM RADIAL

0

EAPDLP05RDDA0

EAPDLP05RDDA0

Everlight Electronics

SENSOR PHOTODIODE 940NM RADIAL

0

EAPDSZ4439A2

EAPDSZ4439A2

Everlight Electronics

SENSOR PHOTODIODE 940NM 2SMD GW

0

EAPDST6048A0

EAPDST6048A0

Everlight Electronics

OXIMETER

1695

EAPDST3227A0

EAPDST3227A0

Everlight Electronics

SENSOR PHOTODIODE 940NM 4SMD MOD

0

EAPDLP04SCAA0

EAPDLP04SCAA0

Everlight Electronics

SENSOR PHOTODIODE 940NM T/H

0

CLS15-22C/L213R/TR8

CLS15-22C/L213R/TR8

Everlight Electronics

SENSOR PHOTODIODE 620NM 4SMD

0

PD70-01B/S57/TR7

PD70-01B/S57/TR7

Everlight Electronics

IR DETECTOR - SUBMINIATURE T 3/4

4687

PD438B/L1

PD438B/L1

Everlight Electronics

SENSOR PHOTODIODE 940NM TO226-2

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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