Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
PDB-C609-2

PDB-C609-2

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM PVC WIRE

457

PDB-C615-2

PDB-C615-2

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM PVC WIRE

0

PDB-C154SM

PDB-C154SM

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM 1210

4184

100-14-21-021

100-14-21-021

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO5

84

PDB-V601-1

PDB-V601-1

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM DIE

0

PDB-C140

PDB-C140

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM RADIAL

0

0800-3111-111

0800-3111-111

Luna Optoelectronics (Advanced Photonix)

INGAAS, 1.0MM AA, TO-46 ISO

102

PDB-C122

PDB-C122

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM 2SMD

0

060-11-41-211

060-11-41-211

Luna Optoelectronics (Advanced Photonix)

PHOTODETECTOR INGAAS 1.5MM TO-39

0

SLSD-71N300

SLSD-71N300

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 930NM RECT

294

PDB-V615-2

PDB-V615-2

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM PVC WIRE

0

SLSD-71N200

SLSD-71N200

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM BOX WIRE

0

160-24-21-021

160-24-21-021

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO5

0

172-11-31-221

172-11-31-221

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO5

0

066-24-21-011

066-24-21-011

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

569

SLD-70BG2A

SLD-70BG2A

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 550NM RADIAL

0

076-11-31-211

076-11-31-211

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

222

076-14-21-011

076-14-21-011

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

73

100-11-21-221

100-11-21-221

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO5

181

057-14-21-011

057-14-21-011

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

384

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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