Optical Sensors - Photodiodes

Part Number	Description / PDF	Quantity
197-121-041 Luna Optoelectronics (Advanced Photonix)	PHOTODIODE 10V 5MM TO5	0
EAPDLP04SCAA3 Everlight Electronics	SENSOR PHOTODIODE 940NM RADIAL	0
SC-25D OSI Optoelectronics	18.8X18.8 MM ACTIVE AREA TETRA L	50
MICROFJ-30035-TSV-TR Sanyo Semiconductor/ON Semiconductor	SENSOR PHOTODIODE 420NM 8WBGA	0
KLI-2113-AAA-ER-AA	LINEAR CCD IMAGE SENSOR	10
FND-100GH Excelitas Technologies	SI PIN, 2.5MM, TO-5, PHOTOCONDUC	0
0050-3111-111 Luna Optoelectronics (Advanced Photonix)	INGAAS, 0.25MM AA, TO-46 ISO	114
CLS15-22C/L213B/TR8 Everlight Electronics	SENSOR PHOTODIODE 470NM 4SMD	0
OPF794 TT Electronics / Optek Technology	SENSOR PHOTODIODE 800NM	0
EAPDSZ4439A1 Everlight Electronics	SENSOR PHOTODIODE 940NM 2SMD GW	0
LLAM-1060-R8BH Excelitas Technologies	SI APD RECEIVER, 0.8MM, TO-66, H	0
02A6A-163-XMD	P1272MC-A6-R 710272-A	300
S-100VL OSI Optoelectronics	9.7X9.7 MM ACTIVE AREA LOW NOISE	46
B15P1PD--H9C000213U1930 Harvatek Corporation	3.2(L)X 2.7 (W)X 1.1 (H) MM PD	0
OSD1-E OSI Optoelectronics	1X1 MM HUMAN EYE RESPONSE SILICO	198
KLI-2104-DAA-ED-AA Sanyo Semiconductor/ON Semiconductor	IMAGE SENSOR CCD LIN RGB 32CDIP	0
EAPDLP04SCAA4 Everlight Electronics	SENSOR PHOTODIODE 940NM RADIAL	0
C30659-1550-R08BH Excelitas Technologies	INGAAS APD RECEIVER, 80UM, TO-8,	0
C30617ECERH Excelitas Technologies	INGAAS PIN, 100 UM, CERAMIC SUBM	0
C30659-1060E-R8BH Excelitas Technologies	SI APD + AMP, TO-8, 200MHZ, HIGH	0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
PIN Photodiode	Wide depletion region for high quantum efficiency	High-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)	Internal gain through impact ionization	LIDAR systems, single-photon detection
Schottky Photodiode	Low capacitance for fast switching	UV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)	Planar structure for high-frequency operation	Optical interconnects in data centers
UV Photodiode	Spectral sensitivity below 400nm	Flame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

Parameter	Description	Importance
Responsivity (A/W)	Current output per unit optical power	Determines signal strength at given irradiance
Dark Current (nA)	Leakage current without illumination	Impacts signal-to-noise ratio in low-light conditions
Rise Time (ns)	Response speed to intensity changes	Critical for high-frequency modulation applications
Junction Capacitance (pF)	Parasitic capacitance at depletion region	Limits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)	Effective wavelength detection window	Dictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

Industrial Automation: Object detection in conveyor systems
Medical Imaging: X-ray detectors in CT scanners
Consumer Electronics: Proximity sensors in smartphones
Telecommunications: 100Gbps coherent optical receivers
Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Hamamatsu Photonics	S1223-6BQ	High-speed Si photodiode with 1.3GHz bandwidth
OSRAM Opto	BFW21R	Blue-enhanced PIN diode for LiDAR applications
First Sensor	FDS030	Low-noise APD for single-photon counting
Excelitas Technologies	C30655GH	InGaAs photodiode for 1.55 m telecom wavelengths
Vishay Semiconductors	BPW34S	High-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.