Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
PDB-V609-3

PDB-V609-3

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM BUSS

0

MTD6013D3-PD

MTD6013D3-PD

Marktech Optoelectronics

3MM PLASTIC FLAT LENS (2 PIN)

30

394-70-72-591

394-70-72-591

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 675NM TO3

0

PDB-C165

PDB-C165

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM 2SMD

0

BPW20RF

BPW20RF

Vishay / Semiconductor - Opto Division

SENSOR PHOTODIODE 920NM RADIAL

0

RPMD-0100

RPMD-0100

ROHM Semiconductor

SENSOR PHOTODIODE 940NM 2SMD

2301

SFH 2201

SFH 2201

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 950NM 2SMD

4015

385-24-21-041

385-24-21-041

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO8

0

MTAPD-07-003

MTAPD-07-003

Marktech Optoelectronics

SENSOR PHOTODIODE 800NM LCC-6

9

ODD-12WB

ODD-12WB

Opto Diode Corporation

SENSOR PHOTODIODE 940NM TO8

337

ARRAYJ-60035-4P-PCB

ARRAYJ-60035-4P-PCB

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM ARRAY

10

444-12-12-171

444-12-12-171

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM

0

QSE973

QSE973

PIN PHOTODIODE

8898

SFH 213

SFH 213

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM RADIAL

30049

AXUVPS7

AXUVPS7

Opto Diode Corporation

SENSOR ELECTRON DETECTION 15MM

0

VEMD10940FX01

VEMD10940FX01

Vishay / Semiconductor - Opto Division

PHOTODIODE 790 TO 1050 NM

5776

PD70-01B/TR10

PD70-01B/TR10

Everlight Electronics

SENSOR PHOTODIODE 940NM 2SMD

0

ODD-1B

ODD-1B

Opto Diode Corporation

SENSOR PHOTODIODE 940NM TO18

38

UVG20S

UVG20S

Opto Diode Corporation

PHOTODIODE UV 24MM2

0

003-151-001

003-151-001

Luna Optoelectronics (Advanced Photonix)

PHOTODIOD 800-1700NM .075MM 1206

1209

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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