| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
|
NE2D_B&W_FOV120_F2.8_NB_NP_1M FT SE ams |
NE2D B&W FOV120 F2.8 NB NP 1M FT |
0 |
|
|
|
NE2D_B&W_F2.7_FOV90_LCC_V2.0 FT SE ams |
NE2D B&W F2.7 FOV90 LCC V2.0 FT |
0 |
|
|
|
ams |
IMAGE SENSORS & COLOR SENSORS AR |
0 |
|
|
|
ams |
LINE SCAN SENSOR 4LS_2K5_RGB_LGA |
0 |
|
|
|
4LS_7K5_RGB_CERAMIC_PGA_V1.0 FT SE ams |
LINE SCAN SENSOR 4LS_7K5_RGB_CER |
0 |
|
|
|
ams |
DR24K3.5 INVAR B&W V3 FT SE |
0 |
|
|
|
ams |
NE2D B&W 2M FT SE |
0 |
|
|
|
ams |
IMAGE SENSORS & COLOR SENSORS AR |
0 |
|
|
|
NE2D_RGB_FOV90F4.0_NP _2M_50UM FT SE ams |
NE2D RGB FOV90F4.0 NP 2M 50UM FT |
0 |
|
|
|
ams |
NE2D B&W 2M NB FT SE |
0 |
|
|
|
ams |
LINE SCAN SENSOR 4LS_10K_RGB_V2. |
0 |
|
|
|
ams |
IMAGE SENSORS & COLOR SENSORS AR |
0 |
|
|
|
NE2D_RGB_FOV90_F4.0_TUBE FT SE ams |
NE2D RGB FOV90 F4.0 TUBE FT SE |
0 |
|
|
|
ams |
ORION2K_CERAMIC_LCC_V1.1 FT SE |
0 |
|
|
|
ams |
LINE SCAN SENSOR 4LS_2K5_B&W_LGA |
0 |
|
|
|
NE2D_RGB_FOV90F4.0_NP_1.05MRCS FT SE ams |
NE2D RGB FOV90F4.0 NP 1.05MRCS |
0 |
|
Image sensors and cameras are optoelectronic devices that convert optical images into electrical signals. They form the core of modern imaging systems, enabling applications from consumer electronics to industrial automation. These sensors capture light intensity and wavelength information through semiconductor materials, primarily CMOS (Complementary Metal-Oxide-Semiconductor) or CCD (Charge-Coupled Device) technologies. Their importance spans machine vision, medical imaging, autonomous vehicles, and IoT devices, driving advancements in AI-powered visual data processing.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| CMOS Sensors | Low power consumption, high integration, cost-effective | Smartphones, DSLR cameras, drones |
| CCD Sensors | Superior light sensitivity, lower noise | Scientific imaging, medical endoscopes |
| CMOS Image Sensors (CIS) | Backside illumination, stacked architecture | High-end smartphones, AR/VR devices |
| Infrared Sensors | Near-infrared (NIR) to long-wave IR detection | Thermal imaging, night vision |
| Time-of-Flight (ToF) Sensors | 3D depth sensing via light pulse timing | Autonomous vehicles, gesture recognition |
A typical image sensor consists of: - Photosensitive Array: Photodiodes or photogates for light-to-charge conversion - Micro-lens Array: Focuses light onto photodiodes - Color Filter Array (CFA): Bayer pattern for color separation - Signal Processing Circuitry: ADC (Analog-to-Digital Converter), amplifiers - Packaging: Ceramic or plastic encapsulation with optical window Modern CIS uses stacked die architecture with through-silicon vias (TSVs) for compact integration.
| Parameter | Description | Importance |
|---|---|---|
| Resolution | Pixel count (e.g., 12MP, 48MP) | Determines image detail level |
| Dynamic Range | Ratio of max/min detectable light (dB) | Low-light performance |
| Quantum Efficiency | Photon-to-electron conversion rate (%) | Sensitivity metric |
| Frame Rate | Images per second (fps) | High-speed motion capture |
| Pixel Size | Physical photodiode dimension ( m) | Tradeoff between sensitivity and resolution |
| Power Consumption | Operating current/voltage (mW) | Battery-powered device longevity |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Sony Semiconductor | IMX700 | 50MP CMOS with RYYB color filter |
| Samsung ISOCELL | HM3 | 108MP sensor with 9-in-1 pixel binning |
| OmniVision | OV64C | 64MP sensor for AR/VR applications |
| ON Semiconductor | AR0234CS | 2.3MP automotive image sensor |
| Teledyne e2v | Emerald series | High-speed industrial CMOS sensors |
Key considerations:
Emerging trends include: - Development of 8K-resolution sensors with stacked DRAM - Event-based vision sensors mimicking biological retinas - Multi-spectral/hyperspectral imaging integration - AI co-processing in sensor nodes (smart cameras) - MicroLED-based image sensors for AR/VR - Advancements in quantum dot sensors for improved low-light performance