| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Analog Devices, Inc. |
HIGH ISOLATION SPDT,40GHZ,FAST S |
5 |
|
 |
Panasonic |
ARD COAXIAL SWITCH |
0 |
|
 |
Analog Devices, Inc. |
LOW INSERTION LOSS, SP4T, 40GHZ, |
0 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SPDT 3GHZ 8MSOP |
2811 |
|
 |
Metelics (MACOM Technology Solutions) |
IC RF SWITCH SPST 8SOIC 3K PCS |
10349000 |
|
 |
Panasonic |
ARD COAXIAL SWITCH |
0 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
PIN SWITCH SP2T 2-18 GHZ |
3 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
PIN SWITCH SPST 2-18 GHZ |
3 |
|
 |
IR (Infineon Technologies) |
IC RF SWITCH SPDT 6GHZ TSNP6-2 |
0 |
|
 |
Radiall USA, Inc. |
SP2 R S18 F 12 D P |
23 |
|
 |
Panasonic |
SWITCH COAXIAL SP 18GHZ 24V SLD |
0 |
|
 |
Analog Devices, Inc. |
WIDEBAND SPST SWITCH |
26000 |
|
 |
IR (Infineon Technologies) |
IC RF SWITCH SP4T ATSLP11-1 |
3025 |
|
 |
Panasonic |
IC RF SWITCH SPDT 18GHZ MODULE |
0 |
|
 |
Panasonic |
ARD COAXIAL SWITCH |
0 |
|
 |
IR (Infineon Technologies) |
WIDEBAND RF SP3T SWITCH |
228009 |
|
 |
IR (Infineon Technologies) |
IC RF SWITCH 4P4T ATSLP12-12 |
4455 |
|
 |
CEL (California Eastern Laboratories) |
IC RF SWITCH SPDT 6GHZ 6TSON |
0 |
|
 |
Radiall USA, Inc. |
ΜSPQ18 LA 24 NSOL |
8 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
PIN SWITCH SP2T 2-18 GHZ |
3 |
|
RF (Radio Frequency) and IF (Intermediate Frequency) switches are critical components in wireless communication systems, enabling signal routing between transmitter, receiver, and antenna. RFID (Radio Frequency Identification) RF switches specifically manage signal paths in RFID readers and tags. These electromechanical or solid-state devices operate in frequency ranges from kHz to GHz, playing vital roles in 5G, IoT, and industrial automation.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Electromechanical Switches | High isolation (>85dB), low insertion loss (<0.5dB), limited lifespan (107 cycles) | Lab test equipment, fixed wireless systems |
| Solid-State Switches | Fast switching speed (<20ns), 50 impedance, moderate power handling (30dBm) | 5G base stations, software-defined radios |
| MEMS Switches | Ultra-low insertion loss (0.2dB), high linearity, vacuum encapsulation | Aerospace phased arrays, medical imaging |
| RFID Antenna Switches | Impedance matching networks, HF/UHF band optimization | Smart logistics, access control systems |
Typical RF switches consist of: - Housing: Aluminum alloy or ceramic packages - Contact system: Gold-plated beryllium copper contacts - Actuator: Electromagnetic coil or MEMS membrane - RF ports: SMA/N-type connectors or surface-mount pads - Dielectric materials: PTFE or ceramic insulators
| Parameter | Typical Values | Importance |
|---|---|---|
| Frequency Range | DC-18GHz (standard) | Determines application bandwidth |
| Insertion Loss | 0.3-2.0 dB | Affects signal strength |
| Isolation | 40-100 dB | Prevents signal interference |
| Power Handling | 10W-100W | Limits maximum operational power |
| Switching Speed | 5ms-50ns | Impacts system response time |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Keysight Technologies | U1880A | 67GHz bandwidth, 500ns switching speed |
| Analog Devices | ADG904 | 4-channel, 3GHz, CMOS process |
| STMicroelectronics | AFBR-5010 | MEMS-based, 0.15dB insertion loss |
| Infineon | BTS724G | Automotive-grade, 40V load protection |
Key considerations: - Frequency matching with system requirements - Power handling capacity with 20% safety margin - Environmental factors (temperature, vibration) - Lifecycle requirements (electromechanical vs. solid-state) - Cost vs. performance trade-offs
Future developments include: - Millimeter-wave switches for 5G/6G (28-100GHz) - Integrated passive devices (IPDs) with embedded switches - Energy-harvesting RFID switch solutions - AI-driven smart switch arrays for dynamic spectrum sharing - Nano-MEMS technology achieving sub-10ns switching