RF Front End (LNA + PA)

Image Part Number Description / PDF Quantity Rfq
MGA-621P8-TR1G

MGA-621P8-TR1G

Broadcom

LF LNA WITH SHUTDOWN DFN 2X2MM

0

AFEM-8007-BLK

AFEM-8007-BLK

Broadcom

IC FRONT END

0

AFEM-S257-TR1G

AFEM-S257-TR1G

Broadcom

IC FRONT END MODULE WIMAX 44SMD

0

AFEM-7413-SG1

AFEM-7413-SG1

Broadcom

IC FRONT END

0

MGA-621P8-BLKG

MGA-621P8-BLKG

Broadcom

LF LNA WITH SHUTDOWN DFN 2X2MM

0

AFEM-S106-TR1G

AFEM-S106-TR1G

Broadcom

FIBER OPTIC TRANSCEIVER

0

AFEM-8007-TR1

AFEM-8007-TR1

Broadcom

IC FRONT END

0

AFEM-S105-TR1G

AFEM-S105-TR1G

Broadcom

IC FRONT END MOD 5GHZ WIFI

0

AFEM-8007-SG1

AFEM-8007-SG1

Broadcom

IC FRONT END

0

AFEM-S106-BLKG

AFEM-S106-BLKG

Broadcom

FIBER OPTIC TRANSCEIVER

0

AFEM-S105-BLKG

AFEM-S105-BLKG

Broadcom

IC FRONT END MOD 5GHZ WIFI

0

AFEM-S257-BLKG

AFEM-S257-BLKG

Broadcom

IC FRONT END MODULE WIMAX 44SMD

0

MGA-622P8-BLKG

MGA-622P8-BLKG

Broadcom

HF LNA WITH SHUTDOWN DFN 2X2MM

0

QFEM-S106-TR1G

QFEM-S106-TR1G

Broadcom

MODULE PA

0

AFEM-7413-TR1

AFEM-7413-TR1

Broadcom

IC FRONT END

0

RF Front End (LNA + PA)

1. Overview

An RF Front End (LNA + PA) integrates a Low Noise Amplifier (LNA) and Power Amplifier (PA) to manage signal transmission and reception in radio frequency systems. The LNA amplifies weak incoming signals with minimal noise addition, while the PA boosts outgoing signals to achieve desired transmission power. These components are critical in wireless communication systems, RFID readers, and IoT devices, enabling reliable data exchange and long-range connectivity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Frequency (LF) RFID Front EndOperates at 30 kHz 300 kHz, high sensitivity for short-range detectionAccess control systems, animal tracking
High-Frequency (HF) RFID Front End13.56 MHz operation, supports mid-range communicationSmart posters, ticketing systems
Ultra-High Frequency (UHF) Front End860 960 MHz, extended read range up to 15 metersSupply chain logistics, inventory management
Integrated LNA+PA ModulesSingle-package solution for transceiver systems5G base stations, automotive radar

3. Structure and Components

A typical RF Front End combines:

  • LNA Section: GaAs or SiGe transistors with input matching networks
  • PA Section: Gallium Nitride (GaN) or Laterally Diffused MOSFET (LDMOS) devices
  • Bandpass filters for frequency selectivity
  • Impedance matching circuits (50 standard)
  • Thermal management structures (heat sinks or thermal vias)

4. Key Technical Specifications

ParameterDescriptionTypical Values
Frequency RangeOperating bandwidth of the front endLF: 125 kHz, HF: 13.56 MHz, UHF: 900 MHz
Gain (LNA)Signal amplification level15 30 dB
Noise Figure (LNA)Measure of signal-to-noise degradation0.5 3 dB
Output Power (PA)Transmitted signal strength20 40 dBm
Power Added Efficiency (PAE)Energy conversion efficiency40 70%
Input/Output ImpedanceMatching network characteristic50 standard

5. Application Fields

Main industries:

  • Telecommunications (5G infrastructure, satellite communication)
  • RFID systems (warehouse tracking, contactless payments)
  • Industrial IoT (sensor networks, asset monitoring)
  • Automotive (V2X communication, tire pressure sensors)

Typical devices: RFID readers, smart meters, drones, medical telemetry systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Analog DevicesHMC1060LP5EDC-6 GHz LNA+PA module for test equipment
QorvoRFFM6902Sub-1 GHz front end for IoT devices
Nordic SemiconductornRF215402.4 GHz range extender for Bluetooth systems
STMicroelectronicsST25R3911BHF RFID reader with integrated LNA

7. Selection Recommendations

Key considerations:

  • Match frequency range to system requirements
  • Balance gain/noise figure for receiver sensitivity
  • Verify PA output power against regulatory limits
  • Evaluate package size for PCB integration
  • Assess temperature stability (-40 C to +85 C typical)
  • Compare power consumption for battery-operated devices

Industry Trend Analysis

Future directions include:

  • Advanced CMOS integration reducing discrete component needs
  • Adoption of GaN-on-SiC for higher power density
  • AI-driven dynamic impedance matching
  • Miniaturization for wearable and implantable devices
  • Multi-band front ends supporting 5G and Wi-Fi 6E coexistence

Market growth driven by IoT expansion and RFID adoption in smart cities, projected at 12% CAGR (2023-2030).

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