RF Amplifiers

Image Part Number Description / PDF Quantity Rfq
NW-PA-13G05A

NW-PA-13G05A

NuWaves Engineering

RF PWR AMP, 50W,800-2000MHZ

21

HILNA-G2V1

HILNA-G2V1

NuWaves Engineering

LOW NOISE AMP, 40DB GAIN, 50-100

27

NW-PA-LS-5-MI01

NW-PA-LS-5-MI01

NuWaves Engineering

RF PWR AMP, 5W, 1.0-2.5GHZ

0

NW-PA-11B02A

NW-PA-11B02A

NuWaves Engineering

RF PWR AMP, 10W, 200-2600MHZ

0

NW-BA-C-15-RX01

NW-BA-C-15-RX01

NuWaves Engineering

RF BIDIRECTIONAL AMP, 15W, 10DB

5

HILNA-CX

HILNA-CX

NuWaves Engineering

LOW NOISE AMP, 35DB GAIN, 5-10GH

8

HILNA-V1

HILNA-V1

NuWaves Engineering

LOW NOISE AMP, 20DB GAIN, 50-100

23

NW-BA-12B04A

NW-BA-12B04A

NuWaves Engineering

RF BIDIRECTIONAL AMP, 10W, 13DB

5

NW-BA-C-10-RX01

NW-BA-C-10-RX01

NuWaves Engineering

RF BIDIRECTIONAL AMP, 10W, 10DB

12

NW-PA-C-20-R01

NW-PA-C-20-R01

NuWaves Engineering

RF PWR AMP, 20W, 4.4-4.9GHZ

15

NW-BA-VU-4-GX02

NW-BA-VU-4-GX02

NuWaves Engineering

RF BIDIRECTIONAL AMP, 16W, 15DB

22

NW-BA-C-10-RX03

NW-BA-C-10-RX03

NuWaves Engineering

RF BIDIRECTIONAL AMP, 10W, 10DB

7

NW-PA-12B01A

NW-PA-12B01A

NuWaves Engineering

RF PWR AMP, 18W, 1.0-2.5GHZ

59

HILNA-LS

HILNA-LS

NuWaves Engineering

LOW NOISE AMP, 50DB GAIN, 1-3GHZ

0

NW-PA-11C01A

NW-PA-11C01A

NuWaves Engineering

RF PWR AMP, 15W, 225-2400MHZ

48

RF Amplifiers

1. Overview

RF/IF amplifiers and RFID amplifiers are critical components in wireless communication systems, designed to boost signal strength while maintaining signal integrity. RF amplifiers operate across radio frequency (RF) and intermediate frequency (IF) bands, enabling signal transmission/reception in devices like base stations, IoT modules, and medical equipment. RFID amplifiers specialize in enhancing signals for radio frequency identification systems, ensuring reliable data exchange between readers and tags. These components are essential for modern technologies such as 5G networks, smart logistics, and contactless payment systems.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low Noise Amplifier (LNA)High sensitivity, minimal added noiseRF receivers, satellite communication
Power Amplifier (PA)High output power, efficiency optimizationCellular base stations, Wi-Fi routers
IF AmplifierFixed/dynamic gain control at IF bandsTelevision tuners, radar systems
Variable Gain Amplifier (VGA)Adjustable gain for signal conditioningSoftware-defined radios, test equipment
RFID Reader AmplifierImpedance matching for tag interrogationUHF RFID readers, NFC terminals

3. Structure and Components

Typical RF amplifiers consist of: - Dielectric substrate (e.g., FR4, Rogers material) with conductive traces - Transistor elements (GaAs FETs, SiGe BJTs, or GaN HEMTs) - Impedance matching networks (LC circuits or microstrip lines) - Thermal management (heat sinks or thermal vias) - Shielded enclosure for EMI protection Modern designs integrate bias tees, directional couplers, and protection diodes.

4. Key Technical Specifications

ParameterDescriptionImportance
Gain (dB)Signal amplification ratioDetermines signal reach and clarity
Noise Figure (dB)Additional noise introducedImpacts receiver sensitivity
Output Power (dBm)Maximum deliverable powerDictates transmission distance
Frequency Range (GHz)Operational bandwidthSystem compatibility factor
P1dB CompressionLinear-to-saturation thresholdEnsures signal fidelity
IP3 (dBm)Intermodulation distortion resistanceMulti-signal environment performance

5. Application Fields

  • Telecommunications: 5G NR base stations, microwave links
  • Healthcare: MRI machine RF coils, wireless endoscopy
  • Logistics: UHF RFID warehouse automation
  • Automotive: V2X communication modules, tire pressure sensors
  • Consumer Electronics: Bluetooth LE beacons, NFC payment terminals

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsLMX2500Integrated synthesizer with 15dBm output power
Analog DevicesADAR10004-channel mmWave beamformer for 24GHz RFID
STMicroelectronicsSTRF79XHighly integrated NFC/RFID transceiver
Nordic SemiconductornRF215402.4GHz front-end module with +20dB gain
ImpinjR4H001UHF Gen2 RFID reader IC with on-chip amplifier

7. Selection Guidelines

Key considerations include: - Frequency alignment with system requirements - Gain flatness across operational bandwidth - Thermal dissipation capabilities - Package type (QFN, BGA, or connectorized) - Environmental compliance (temperature, humidity) - Cost vs. performance trade-offs

8. Industry Trends

Emerging trends include: - Transition to GaN technology for higher power density - Silicon integration for mmWave applications - AI-driven dynamic impedance matching - Energy-efficient Class-J and Doherty architectures - Convergence with photonic ICs for 6G systems

RFQ BOM Call Skype Email
Top