RF Amplifiers

Image Part Number Description / PDF Quantity Rfq
MW4IC001MR4

MW4IC001MR4

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND MEDIUM POWER AMPLIFIER

90

MMG3012NT1

MMG3012NT1

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND LOW POWER AMPLIFIER, 0

0

MMM5063R2

MMM5063R2

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

802

MD7IC2050NBR1

MD7IC2050NBR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

414

MMG20271HT1

MMG20271HT1

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND MEDIUM POWER AMPLIFIER

2880

MD7IC2012GNR1

MD7IC2012GNR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

218

MMG3007NT1

MMG3007NT1

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND LOW POWER AMPLIFIER, 0

137

MWE6IC9100NR1

MWE6IC9100NR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

39

MD7IC2050NR1

MD7IC2050NR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

246

MW7IC18100NR1

MW7IC18100NR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

89

MMG3015NT1

MMG3015NT1

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND LOW POWER AMPLIFIER, 0

8245

MW7IC2750NBR1

MW7IC2750NBR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

0

MW4IC915MBR1

MW4IC915MBR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND HIGH POWER AMPLIFIER,

479

MMG3002NT1

MMG3002NT1

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND LOW POWER AMPLIFIER, 4

893

MW4IC2230MBR5

MW4IC2230MBR5

Freescale Semiconductor, Inc. (NXP Semiconductors)

IC PWR AMP RF 28V 30W TO-272-16

45

MMH3111NT1

MMH3111NT1

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND MEDIUM POWER AMPLIFIER

0

MW6IC2240NBR1

MW6IC2240NBR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

220

MW7IC2040NBR1

MW7IC2040NBR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

NARROW BAND HIGH POWER AMPLIFIER

423

MD7IC2250NBR1

MD7IC2250NBR1

Freescale Semiconductor, Inc. (NXP Semiconductors)

RF AND BASEBAND CIRCUIT, PDFM14

2169

MBC13917EPR2

MBC13917EPR2

Freescale Semiconductor, Inc. (NXP Semiconductors)

WIDE BAND LOW POWER AMPLIFIER

2210925

RF Amplifiers

1. Overview

RF/IF amplifiers and RFID amplifiers are critical components in wireless communication systems, designed to boost signal strength while maintaining signal integrity. RF amplifiers operate across radio frequency (RF) and intermediate frequency (IF) bands, enabling signal transmission/reception in devices like base stations, IoT modules, and medical equipment. RFID amplifiers specialize in enhancing signals for radio frequency identification systems, ensuring reliable data exchange between readers and tags. These components are essential for modern technologies such as 5G networks, smart logistics, and contactless payment systems.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low Noise Amplifier (LNA)High sensitivity, minimal added noiseRF receivers, satellite communication
Power Amplifier (PA)High output power, efficiency optimizationCellular base stations, Wi-Fi routers
IF AmplifierFixed/dynamic gain control at IF bandsTelevision tuners, radar systems
Variable Gain Amplifier (VGA)Adjustable gain for signal conditioningSoftware-defined radios, test equipment
RFID Reader AmplifierImpedance matching for tag interrogationUHF RFID readers, NFC terminals

3. Structure and Components

Typical RF amplifiers consist of: - Dielectric substrate (e.g., FR4, Rogers material) with conductive traces - Transistor elements (GaAs FETs, SiGe BJTs, or GaN HEMTs) - Impedance matching networks (LC circuits or microstrip lines) - Thermal management (heat sinks or thermal vias) - Shielded enclosure for EMI protection Modern designs integrate bias tees, directional couplers, and protection diodes.

4. Key Technical Specifications

ParameterDescriptionImportance
Gain (dB)Signal amplification ratioDetermines signal reach and clarity
Noise Figure (dB)Additional noise introducedImpacts receiver sensitivity
Output Power (dBm)Maximum deliverable powerDictates transmission distance
Frequency Range (GHz)Operational bandwidthSystem compatibility factor
P1dB CompressionLinear-to-saturation thresholdEnsures signal fidelity
IP3 (dBm)Intermodulation distortion resistanceMulti-signal environment performance

5. Application Fields

  • Telecommunications: 5G NR base stations, microwave links
  • Healthcare: MRI machine RF coils, wireless endoscopy
  • Logistics: UHF RFID warehouse automation
  • Automotive: V2X communication modules, tire pressure sensors
  • Consumer Electronics: Bluetooth LE beacons, NFC payment terminals

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsLMX2500Integrated synthesizer with 15dBm output power
Analog DevicesADAR10004-channel mmWave beamformer for 24GHz RFID
STMicroelectronicsSTRF79XHighly integrated NFC/RFID transceiver
Nordic SemiconductornRF215402.4GHz front-end module with +20dB gain
ImpinjR4H001UHF Gen2 RFID reader IC with on-chip amplifier

7. Selection Guidelines

Key considerations include: - Frequency alignment with system requirements - Gain flatness across operational bandwidth - Thermal dissipation capabilities - Package type (QFN, BGA, or connectorized) - Environmental compliance (temperature, humidity) - Cost vs. performance trade-offs

8. Industry Trends

Emerging trends include: - Transition to GaN technology for higher power density - Silicon integration for mmWave applications - AI-driven dynamic impedance matching - Energy-efficient Class-J and Doherty architectures - Convergence with photonic ICs for 6G systems

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