RF Amplifiers

Image Part Number Description / PDF Quantity Rfq
F1200NBGI8

F1200NBGI8

Renesas Electronics America

IC AMP GP 50MHZ-160MHZ 28VFQFPN

17500

F1241NBGI

F1241NBGI

Renesas Electronics America

IC RF AMP 10MHZ-500MHZ 32VFQFPN

170

UPC2746TB-E3-A

UPC2746TB-E3-A

Renesas Electronics America

WIDE BAND LOW POWER AMPLIFIER, 1

0

UPC8181TB-E3-A

UPC8181TB-E3-A

Renesas Electronics America

RF/MICROWAVE AMPLIFIER, BIPOLAR

103575

F1420NLGK8

F1420NLGK8

Renesas Electronics America

VFQFPN 4.00X4.00X0.90 MM, 0.50MM

0

UPC8178TB-E3-A

UPC8178TB-E3-A

Renesas Electronics America

RF/MICROWAVE AMPLIFIER, BIPOLAR

38898

UPC3223TB-E3-A

UPC3223TB-E3-A

Renesas Electronics America

RF/MICROWAVE AMPLIFIER, BIPOLAR

30486

UPD5740T6N-E2-A

UPD5740T6N-E2-A

Renesas Electronics America

ANALOG CIRCUIT, BICMOS, PDSO6

92850

UPC3224TB-E3-A

UPC3224TB-E3-A

Renesas Electronics America

RF/MICROWAVE AMPLIFIER, BIPOLAR

55423

UPC2748TB-E3-A

UPC2748TB-E3-A

Renesas Electronics America

WIDE BAND LOW POWER AMPLIFIER

0

UPC8236T6N-E2-A

UPC8236T6N-E2-A

Renesas Electronics America

NARROW BAND HIGH POWER AMPLIFIER

1088092

F2480NBGI

F2480NBGI

Renesas Electronics America

IC RF AMP 400MHZ-3GHZ 32VFQFPN

14

UPC3239TB-E3-A

UPC3239TB-E3-A

Renesas Electronics America

NARROW BAND LOW POWER AMPLIFIER

93000

F1421NLGK

F1421NLGK

Renesas Electronics America

VFQFPN 4.00X4.00X0.90 MM, 0.50MM

0

UPC2749TB-E3-A

UPC2749TB-E3-A

Renesas Electronics America

WIDE BAND LOW POWER AMPLIFIER

0

UPC2708TB-E3-A

UPC2708TB-E3-A

Renesas Electronics America

WIDE BAND LOW POWER AMPLIFIER, 1

0

F1423NBGI8

F1423NBGI8

Renesas Electronics America

VFQFPN 4.00X4.00X0.80 MM, 0.50MM

0

UPC2711TB-E3-A

UPC2711TB-E3-A

Renesas Electronics America

WIDE BAND LOW POWER AMPLIFIER

43616

F1420NLGK

F1420NLGK

Renesas Electronics America

VFQFPN 4.00X4.00X0.90 MM, 0.50MM

0

UPC3227TB-E3-A

UPC3227TB-E3-A

Renesas Electronics America

WIDE BAND LOW POWER AMPLIFIER

276000

RF Amplifiers

1. Overview

RF/IF amplifiers and RFID amplifiers are critical components in wireless communication systems, designed to boost signal strength while maintaining signal integrity. RF amplifiers operate across radio frequency (RF) and intermediate frequency (IF) bands, enabling signal transmission/reception in devices like base stations, IoT modules, and medical equipment. RFID amplifiers specialize in enhancing signals for radio frequency identification systems, ensuring reliable data exchange between readers and tags. These components are essential for modern technologies such as 5G networks, smart logistics, and contactless payment systems.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low Noise Amplifier (LNA)High sensitivity, minimal added noiseRF receivers, satellite communication
Power Amplifier (PA)High output power, efficiency optimizationCellular base stations, Wi-Fi routers
IF AmplifierFixed/dynamic gain control at IF bandsTelevision tuners, radar systems
Variable Gain Amplifier (VGA)Adjustable gain for signal conditioningSoftware-defined radios, test equipment
RFID Reader AmplifierImpedance matching for tag interrogationUHF RFID readers, NFC terminals

3. Structure and Components

Typical RF amplifiers consist of: - Dielectric substrate (e.g., FR4, Rogers material) with conductive traces - Transistor elements (GaAs FETs, SiGe BJTs, or GaN HEMTs) - Impedance matching networks (LC circuits or microstrip lines) - Thermal management (heat sinks or thermal vias) - Shielded enclosure for EMI protection Modern designs integrate bias tees, directional couplers, and protection diodes.

4. Key Technical Specifications

ParameterDescriptionImportance
Gain (dB)Signal amplification ratioDetermines signal reach and clarity
Noise Figure (dB)Additional noise introducedImpacts receiver sensitivity
Output Power (dBm)Maximum deliverable powerDictates transmission distance
Frequency Range (GHz)Operational bandwidthSystem compatibility factor
P1dB CompressionLinear-to-saturation thresholdEnsures signal fidelity
IP3 (dBm)Intermodulation distortion resistanceMulti-signal environment performance

5. Application Fields

  • Telecommunications: 5G NR base stations, microwave links
  • Healthcare: MRI machine RF coils, wireless endoscopy
  • Logistics: UHF RFID warehouse automation
  • Automotive: V2X communication modules, tire pressure sensors
  • Consumer Electronics: Bluetooth LE beacons, NFC payment terminals

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsLMX2500Integrated synthesizer with 15dBm output power
Analog DevicesADAR10004-channel mmWave beamformer for 24GHz RFID
STMicroelectronicsSTRF79XHighly integrated NFC/RFID transceiver
Nordic SemiconductornRF215402.4GHz front-end module with +20dB gain
ImpinjR4H001UHF Gen2 RFID reader IC with on-chip amplifier

7. Selection Guidelines

Key considerations include: - Frequency alignment with system requirements - Gain flatness across operational bandwidth - Thermal dissipation capabilities - Package type (QFN, BGA, or connectorized) - Environmental compliance (temperature, humidity) - Cost vs. performance trade-offs

8. Industry Trends

Emerging trends include: - Transition to GaN technology for higher power density - Silicon integration for mmWave applications - AI-driven dynamic impedance matching - Energy-efficient Class-J and Doherty architectures - Convergence with photonic ICs for 6G systems

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