| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Analog Devices, Inc. |
IC RF AMP GP 24GHZ-29.5GHZ 24LCC |
51 |
|
 |
NXP Semiconductors |
SIGE:C LOW NOISE AMPLIFIER MMIC |
5000 |
|
 |
Metelics (MACOM Technology Solutions) |
AMPLIFIER,SURFACE MOUNT |
1020 |
|
 |
Analog Devices, Inc. |
IC RF AMP CDMA 700MHZ-1GHZ |
0 |
|
 |
Skyworks Solutions, Inc. |
IC AMP LNA 2-STAGE 16QFN |
2147483647 |
|
 |
SMT GAIN BLOCK, DC - 1000 MHZ, 5 |
0 |
|
|
 |
Texas Instruments |
IC AMP CELLULAR 40MHZ-4GHZ 8WSON |
0 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
LNA 6-8 GHZ |
3 |
|
 |
Metelics (MACOM Technology Solutions) |
AMPLIFIER |
1013 |
|
 |
Roving Networks / Microchip Technology |
MMIC, .5-12GHZ LNA, QFN PKG |
0 |
|
 |
NXP Semiconductors |
IC AMP GP 800-900MHZ TO272 WB-16 |
0 |
|
 |
NXP Semiconductors |
IC RF AMP GP 2.4GHZ SOT363 |
577 |
|
 |
Analog Devices, Inc. |
IC RF AMP VSAT 17.5GHZ-40GHZ DIE |
0 |
|
 |
Metelics (MACOM Technology Solutions) |
AMPLIFIER,SURFACE MOUNT |
6 |
|
 |
Analog Devices, Inc. |
IC AMP VSAT 24GHZ-43.5GHZ 16SMT |
332 |
|
 |
Broadcom |
IC RF AMP GP 1.5GHZ-3GHZ SOT89-3 |
0 |
|
 |
Renesas Electronics America |
IC RF AMP 10MHZ-500MHZ 32VFQFPN |
170 |
|
 |
IR (Infineon Technologies) |
BGA5M1 - LTE / 3G LNAS |
24000 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
LNA 6-18 GHZ |
3 |
|
 |
Analog Devices, Inc. |
25DB 34V 550MA DOCIS 3.1 GAN |
0 |
|
RF/IF amplifiers and RFID amplifiers are critical components in wireless communication systems, designed to boost signal strength while maintaining signal integrity. RF amplifiers operate across radio frequency (RF) and intermediate frequency (IF) bands, enabling signal transmission/reception in devices like base stations, IoT modules, and medical equipment. RFID amplifiers specialize in enhancing signals for radio frequency identification systems, ensuring reliable data exchange between readers and tags. These components are essential for modern technologies such as 5G networks, smart logistics, and contactless payment systems.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Low Noise Amplifier (LNA) | High sensitivity, minimal added noise | RF receivers, satellite communication |
| Power Amplifier (PA) | High output power, efficiency optimization | Cellular base stations, Wi-Fi routers |
| IF Amplifier | Fixed/dynamic gain control at IF bands | Television tuners, radar systems |
| Variable Gain Amplifier (VGA) | Adjustable gain for signal conditioning | Software-defined radios, test equipment |
| RFID Reader Amplifier | Impedance matching for tag interrogation | UHF RFID readers, NFC terminals |
Typical RF amplifiers consist of: - Dielectric substrate (e.g., FR4, Rogers material) with conductive traces - Transistor elements (GaAs FETs, SiGe BJTs, or GaN HEMTs) - Impedance matching networks (LC circuits or microstrip lines) - Thermal management (heat sinks or thermal vias) - Shielded enclosure for EMI protection Modern designs integrate bias tees, directional couplers, and protection diodes.
| Parameter | Description | Importance |
|---|---|---|
| Gain (dB) | Signal amplification ratio | Determines signal reach and clarity |
| Noise Figure (dB) | Additional noise introduced | Impacts receiver sensitivity |
| Output Power (dBm) | Maximum deliverable power | Dictates transmission distance |
| Frequency Range (GHz) | Operational bandwidth | System compatibility factor |
| P1dB Compression | Linear-to-saturation threshold | Ensures signal fidelity |
| IP3 (dBm) | Intermodulation distortion resistance | Multi-signal environment performance |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Texas Instruments | LMX2500 | Integrated synthesizer with 15dBm output power |
| Analog Devices | ADAR1000 | 4-channel mmWave beamformer for 24GHz RFID |
| STMicroelectronics | STRF79X | Highly integrated NFC/RFID transceiver |
| Nordic Semiconductor | nRF21540 | 2.4GHz front-end module with +20dB gain |
| Impinj | R4H001 | UHF Gen2 RFID reader IC with on-chip amplifier |
Key considerations include: - Frequency alignment with system requirements - Gain flatness across operational bandwidth - Thermal dissipation capabilities - Package type (QFN, BGA, or connectorized) - Environmental compliance (temperature, humidity) - Cost vs. performance trade-offs
Emerging trends include: - Transition to GaN technology for higher power density - Silicon integration for mmWave applications - AI-driven dynamic impedance matching - Energy-efficient Class-J and Doherty architectures - Convergence with photonic ICs for 6G systems