| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
LED Engin |
EMITTER UV 400NM 1A |
0 |
|
 |
LED Engin |
EMITTER VIOLET 405NM CLEAR DOME |
0 |
|
 |
LED Engin |
EMITTER UV 1A 405NM-410NM |
0 |
|
 |
LED Engin |
EMITTER UV 365NM 700MA STAR |
0 |
|
 |
LED Engin |
EMITTER VIOLET 365NM CLEAR DOME |
0 |
|
 |
LED Engin |
EMITTER UV 405NM 1A |
0 |
|
 |
LED Engin |
EMITTER UV 400NM 1A SMD |
0 |
|
 |
LED Engin |
EMITTER VIOLET 390NM CLEAR DOME |
0 |
|
 |
LED Engin |
EMITTER UV 405NM 1A |
0 |
|
 |
LED Engin |
EMITTER UV 365NM 700MA STAR |
0 |
|
 |
LED Engin |
EMITTER UV 365NM 1A |
0 |
|
 |
LED Engin |
EMITTER UV 1A 395NM-400NM |
0 |
|
 |
LED Engin |
EMITTER UV 410NM 1A STAR |
0 |
|
 |
LED Engin |
EMITTER VIOLET 395NM CLEAR DOME |
0 |
|
 |
LED Engin |
EMITTER UV 395NM 1A |
0 |
|
 |
LED Engin |
EMITTER UV 405NM 1A SMD |
0 |
|
 |
LED Engin |
EMITTER UV STAR MCPCB |
0 |
|
 |
LED Engin |
EMITTER UV 395NM 1A |
0 |
|
 |
LED Engin |
EMITTER UV 365NM 700MA 2SMD |
0 |
|
 |
LED Engin |
EMITTER UV 400NM 1A |
0 |
|
Light Emitting Diodes (LEDs) are semiconductor devices that convert electrical energy into light. The categories of infrared (IR), ultraviolet (UV), and visible LEDs are differentiated by their emission wavelengths. These devices play critical roles in modern technology, enabling applications from communication systems to medical diagnostics, with advantages including energy efficiency, compact size, and long operational lifetimes.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Infrared LEDs | 850-940 nm wavelength, low power consumption, invisible emission | Remote controls, night vision cameras, optical sensors |
| UV LEDs | 280-400 nm wavelength, germicidal properties, high photon energy | Water purification, counterfeit detection, medical disinfection |
| Visible LEDs | 400-700 nm wavelength, high brightness, color tunability | Lighting, displays, automotive indicators |
LED emitters typically consist of: - Die: Semiconductor material (e.g., GaAs for IR, AlGaN for UV, InGaN for visible) - Substrate: Sapphire or silicon carbide for mechanical support - Encapsulation: Epoxy or silicone lens for light extraction and protection - Contact Layers: Metal electrodes for electrical connection - Thermal Pad: For heat dissipation in high-power devices
| Parameter | Description | Importance |
|---|---|---|
| Wavelength ( ) | Peak emission spectrum | Determines application suitability |
| Optical Power | Light output (mW or W) | Performance in sensing/illumination |
| Efficiency (W/W) | Electrical-to-optical conversion rate | Energy consumption and thermal management |
| Viewing Angle | Light emission spread ( ) | Optical design flexibility |
| Operating Temperature | -40 C to +125 C range | Reliability in harsh environments |
Major industries include: - Consumer Electronics: Smartphones (proximity sensors), TVs (backlighting) - Healthcare: Pulse oximeters (IR), sterilization equipment (UV) - Industrial: Machine vision systems (visible), chemical detection (UV) - Security: Surveillance cameras (IR), document authentication (UV) - Automotive: Brake lights (visible), LiDAR systems (IR)
| Manufacturer | Product Examples | Key Features |
|---|---|---|
| OSRAM Opto | SFH 4715A (IR) | 940 nm, 1.5 W radiant power |
| Cree LED | UV5T-3535 (UV) | 365 nm, 120 mW output |
| Nichia Corporation | NCSxW215BS (Visible) | White LED with 215 lm output |
Key factors include: - Spectral matching to target application (e.g., 280-320 nm for DNA analysis) - Thermal management requirements (e.g., heatsinks for >1 W devices) - Environmental conditions (e.g., IP67 rating for outdoor use) - Cost vs. performance tradeoffs (e.g., high-efficiency UV LEDs for sterilization) - Compatibility with drive electronics (current/voltage specifications)
Emerging developments: - Miniaturization for wearable devices (e.g., sub-1 mm IR LEDs) - Increased UV-C efficiency (targeting 10% wall-plug efficiency) - Integration with IoT systems (smart lighting networks) - Advancements in phosphor conversion for visible LEDs - Wide bandgap semiconductor adoption (GaN-on-SiC substrates) - Environmental regulations driving mercury-free UV solutions