| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Excelitas Technologies |
LASER MODULE 532NM 20MW |
0 |
|
 |
CEL (California Eastern Laboratories) |
LASER DIODE 405NM 600MW TO18 |
0 |
|
 |
Seeed |
LASER DIODE 650NM 5MW 12MM DIA |
0 |
|
 |
Sharp Microelectronics |
LASER DIODE 654NM 10MW TO18 |
0 |
|
 |
CEL (California Eastern Laboratories) |
LASER DIODE 1550NM 80MW MODULE |
0 |
|
 |
Sharp Microelectronics |
LASER DIODE 406NM 105MW TO18 |
0 |
|
 |
US-Lasers, Inc. |
LASER DIODE 640NM 5MW 6.4MM DIA |
0 |
|
 |
Quarton, Inc. |
LASER DIODE 532NM 5MW 13MM DIA |
0 |
|
 |
Quarton, Inc. |
LASER DIODE 532NM 5MW 10.5MM DIA |
0 |
|
 |
TT Electronics / Optek Technology |
LASER DIODE 850NM 1.5MW PILL |
0 |
|
 |
CEL (California Eastern Laboratories) |
LASER DIODE 1310NM 110MW MODULE |
0 |
|
 |
US-Lasers, Inc. |
LASER DIODE 640NM 5MW 10.4MM DIA |
0 |
|
 |
Quarton, Inc. |
LASER DIODE 532NM 5MW 10.5MM DIA |
0 |
|
 |
US-Lasers, Inc. |
LASER DIODE 640NM 4.8MW 10.4MM |
0 |
|
 |
Sharp Microelectronics |
LASER DIODE 654NM 7MW TO18 |
0 |
|
 |
Quarton, Inc. |
LASER DIODE 532NM 5MW |
0 |
|
 |
Seeed |
LASER DIODE 650NM 5MW 12MM DIA |
0 |
|
 |
Lumex, Inc. |
LASER DIODE 658NM 50MW TO18 |
0 |
|
 |
TT Electronics / Optek Technology |
LASER DIODE 850NM 4.5MW 3SMD |
0 |
|
 |
US-Lasers, Inc. |
LASER DIODE 660NM 5MW TO18 |
0 |
|
Laser diodes (LDs) are semiconductor devices that emit coherent light through stimulated emission. Laser modules integrate LDs with optical components, drivers, and thermal management systems. These devices are critical in telecommunications, medical systems, industrial processing, and consumer electronics due to their high efficiency, compact size, and precise beam control.
| Type | Functional Features | Application Examples |
|---|---|---|
| Edge-Emitting Laser Diodes | High power output, narrow spectral width | Fiber optic communication, LIDAR |
| Vertical-Cavity Surface-Emitting Lasers (VCSELs) | Low divergence beam, array scalability | 3D sensing, data centers |
| Quantum Cascade Lasers | Tunable mid-infrared emission | Gas sensing, spectroscopy |
| Fiber-Coupled Laser Modules | Integrated beam shaping, wavelength stabilization | Material processing, medical surgery |
| Multi-Transverse Mode Lasers | High brightness, multimode output | Laser projection, defense systems |
Laser Diodes: Composed of an active region (quantum well structure), cladding layers, and a resonant cavity formed by cleaved facets. Electrical contacts enable current injection.
Laser Modules: Integrate LDs with:
| Parameter | Description | Importance |
|---|---|---|
| Wavelength (nm) | Emission spectrum peak | Determines material compatibility and application suitability |
| Output Power (mW/W) | Optical power level | Critical for processing speed and transmission distance |
| Wall-Plug Efficiency (%) | Electrical-to-optical conversion rate | Affects thermal management and power consumption |
| Beam Quality (M ) | Deviatoin from ideal Gaussian beam | Impacts focusing precision and coupling efficiency |
| Lifetime (hours) | Mean time before power 10% | System reliability and maintenance intervals |
Telecommunications: DWDM systems, free-space optical links
Medical: Laser scalpels, photodynamic therapy devices
Industrial: Cutting/welding machines, 3D printers
Consumer Electronics: LiDAR for AR/VR, facial recognition systems
Scientific: Atomic clocks, quantum computing research
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Lumentum | LD-XX-Y Series | 1550nm wavelength, 100mW output, telecom-grade reliability |
| IPG Photonics | LM-ABC-10W | Single-mode fiber delivery, 10W output at 976nm |
| Coherent | OBIS Flexx Series | Tunable visible/near-IR output, integrated control |
| Hamamatsu Photonics | L8612 Series | Pulsed VCSEL with 940nm peak wavelength |
Key considerations:
Emerging developments include: