PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
BD2270HFV-LBTR

BD2270HFV-LBTR

ROHM Semiconductor

IC GATE DRVR HIGH-SIDE HVSOF5

2444

BS2132F-E2

BS2132F-E2

ROHM Semiconductor

600V HIGH VOLTAGE 3 PHASE BRIDGE

1476

BD16952EFV-ME2

BD16952EFV-ME2

ROHM Semiconductor

IC GATE DRVR HALF-BRIDG 24HTSSOP

7774

BM60213FV-CE2

BM60213FV-CE2

ROHM Semiconductor

IC GATE DRVR HI/LOW SIDE 20SSOP

1463

BM60212FV-CE2

BM60212FV-CE2

ROHM Semiconductor

IC GATE DRVR HI/LOW SIDE 20SSOP

1728

BS2100F-E2

BS2100F-E2

ROHM Semiconductor

IC DVR IGBT/MOSFET

2188

BD2270HFV-TR

BD2270HFV-TR

ROHM Semiconductor

IC GATE DRVR HIGH-SIDE HVSOF5

12653

BS2101F-E2

BS2101F-E2

ROHM Semiconductor

IC GATE DRV HI-SIDE/LO-SIDE 8SOP

2329

BS2114F-E2

BS2114F-E2

ROHM Semiconductor

600V HIGH VOLTAGE HIGH & LOW-SID

2357

BD16950EFV-CE2

BD16950EFV-CE2

ROHM Semiconductor

IC GATE DRVR HALF-BRIDG 24HTSSOP

2000

BS2103F-E2

BS2103F-E2

ROHM Semiconductor

IC GATE DRVR HALF-BRIDGE 8SOP

44

BD6563FV-LBE2

BD6563FV-LBE2

ROHM Semiconductor

IC GATE DRVR LOW-SIDE 16SSOP

0

BD6562FV-LBE2

BD6562FV-LBE2

ROHM Semiconductor

IC GATE DRVR LOW-SIDE 16SSOP

0

BM6103FV-CE2

BM6103FV-CE2

ROHM Semiconductor

IC GATE DRVR LOW-SIDE 20SSOP

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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