PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IRS2128SPBF

IRS2128SPBF

IR (Infineon Technologies)

BUFFER/INVERTER BASED MOSFET DRI

29672

IRS2184PBF

IRS2184PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

2146

IR4426PBF

IR4426PBF

IR (Infineon Technologies)

IR4426 - GATE DRIVER

29923

2ED020I12FIXUMA1

2ED020I12FIXUMA1

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE DSO18-2

581

AUIR3200STR

AUIR3200STR

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

4735

IR2304SPBF

IR2304SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR2125STRPBF

IR2125STRPBF

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 16SOIC

1433

IR21091PBF

IR21091PBF

IR (Infineon Technologies)

IR21091 - HALF-BRIDGE DRIVER

5950

IR21271PBF

IR21271PBF

IR (Infineon Technologies)

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

2903

1EDN7512GXTMA1

1EDN7512GXTMA1

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 6WSON

2

IRS2332DSTRPBF

IRS2332DSTRPBF

IR (Infineon Technologies)

IRS2332 - 3-PHASE-BRIDGE DRIVER

2625

IRS2008MPBFAUMA1

IRS2008MPBFAUMA1

IR (Infineon Technologies)

LEVEL SHIFT JUNCTION ISO

0

IR2106SPBF

IR2106SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

52

IRS2110PBF

IRS2110PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

1207

IR21834SPBF

IR21834SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IR2133SPBF

IR2133SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

985

2EDL23I06PJXUMA1

2EDL23I06PJXUMA1

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE DSO14

3402

AUIRS21811STR

AUIRS21811STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

4976

IRS2509SPBF

IRS2509SPBF

IR (Infineon Technologies)

HALF-BRIDGE DRIVER

4540

2EDL05I06BFXUMA1

2EDL05I06BFXUMA1

IR (Infineon Technologies)

2EDL05I06 - GATE DRIVER

2500

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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