PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR44273LTRPBF

IR44273LTRPBF

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE SOT23-5

0

IR25604SPBF-INF

IR25604SPBF-INF

IR (Infineon Technologies)

HIGH AND LOW SIDE DRIVER

9785

IRS4428STRPBF

IRS4428STRPBF

IR (Infineon Technologies)

IRS4428 - GATE DRIVER

2256

IRS21850SPBF

IRS21850SPBF

IR (Infineon Technologies)

IRS21850 - GATE DRIVER

0

2EDF7275KXUMA2

2EDF7275KXUMA2

IR (Infineon Technologies)

DRIVER IC

0

IR2102STRPBF

IR2102STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IRS23364DSTRPBF

IRS23364DSTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

1971

IRS2101SPBF

IRS2101SPBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 8SOIC

3202

IR2235JPBF

IR2235JPBF

IR (Infineon Technologies)

IR2235J - GATE DRIVER

1053

6ED003L02F2XUMA1

6ED003L02F2XUMA1

IR (Infineon Technologies)

6ED003L02 - GATE DRIVER

25151

IRS21814PBF

IRS21814PBF

IR (Infineon Technologies)

IRS21814 - GATE DRIVER

10050

IR2301STRPBF

IR2301STRPBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 8SOIC

26

IRS2001SPBF

IRS2001SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

10844

IR2302SPBF

IR2302SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

4398

IRS2011SPBF

IRS2011SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

875

IRS4427SPBF

IRS4427SPBF

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8SOIC

128

IRS26302DJTRPBF

IRS26302DJTRPBF

IR (Infineon Technologies)

HALF BRIDGE BASED IGBT/MOSFET DR

0

IRS2011PBF

IRS2011PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

2603

IR21064SPBF

IR21064SPBF

IR (Infineon Technologies)

HALF-BRIDGE BASED MOSFET DRIVER

1705

IR2233STRPBF

IR2233STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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