PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IXDD404SIA

IXDD404SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXE611S1

IXE611S1

Wickmann / Littelfuse

IC GATE DRVR MOSF/IGBT 8SOIC

0

IXC611S1

IXC611S1

Wickmann / Littelfuse

IC GATE DRVR HALF BRIDGE 8SOIC

0

IXDI404PI

IXDI404PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

0

IXK611P1

IXK611P1

Wickmann / Littelfuse

IC GATE DRVR HALF BRIDGE 8DIP

0

IXZ631DF18N50

IXZ631DF18N50

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 10SMD

0

IXDN404SI

IXDN404SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDD504D2

IXDD504D2

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DFN

0

IX2B11S7T/R

IX2B11S7T/R

Wickmann / Littelfuse

IC GATE DRVR HALF BRIDGE 14SOIC

0

IX6R11S3T/R

IX6R11S3T/R

Wickmann / Littelfuse

IC GATE DRVR HALF-BRIDGE 16SOIC

0

IXDI502SIA

IXDI502SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDD408PI

IXDD408PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

0

IXDD509SIA

IXDD509SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDD509D1

IXDD509D1

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 6DFN

0

IXDN404PI

IXDN404PI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8DIP

0

IXDI509SIA

IXDI509SIA

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

0

IXDN414SI

IXDN414SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 14SOIC

0

IXBD4410SI

IXBD4410SI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 16SOIC

0

IX21844NTR

IX21844NTR

Wickmann / Littelfuse

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IXJ611S1

IXJ611S1

Wickmann / Littelfuse

IC GATE DRVR HALF BRIDGE 8SOIC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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