PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
MC33883HEG

MC33883HEG

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 20SOIC

0

BUK218-50DC,118

BUK218-50DC,118

NXP Semiconductors

NOW NEXPERIA BUK218-50DC - BUFFE

129

MC33GD3100EKR2

MC33GD3100EKR2

NXP Semiconductors

IGBT GATE DRIVE IC

0

MC33883HEGR2

MC33883HEGR2

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 20SOIC

1507

MC33GD3100EK

MC33GD3100EK

NXP Semiconductors

IGBT GATE DRIVE IC

381

MC33GD3100A3EKR2

MC33GD3100A3EKR2

NXP Semiconductors

IGBT GATE DRIVE IC

0

MC33GD3100A3EK

MC33GD3100A3EK

NXP Semiconductors

IGBT GATE DRIVE IC

126

PCA9440HE-Q100Z

PCA9440HE-Q100Z

NXP Semiconductors

HALF BRIDGE W/ OPT DRIVER ACE-Q1

0

PCA9440HEZ

PCA9440HEZ

NXP Semiconductors

HALF BRIDGE WITH DRIVER OPTION

0

MCZ33883EG

MCZ33883EG

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 20SOIC

0

MCZ33285EF

MCZ33285EF

NXP Semiconductors

IC GATE DRVR HIGH-SIDE 8SOIC

0

MCZ33198EF

MCZ33198EF

NXP Semiconductors

IC GATE DRVR HIGH-SIDE 8SOIC

0

UBA2032TS/N3,118

UBA2032TS/N3,118

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 28SSOP

0

MC33395EW

MC33395EW

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 32SOIC

0

MC33395DWB

MC33395DWB

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 32SOIC

0

MCZ33285EFR2

MCZ33285EFR2

NXP Semiconductors

IC GATE DRVR HIGH-SIDE 8SOIC

0

UBA2032T/N2,118

UBA2032T/N2,118

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 24SO

0

MC33395EWR2

MC33395EWR2

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 32SOIC

0

UBA2032TS/N2,118

UBA2032TS/N2,118

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 28SSOP

0

MC33395TDWBR2

MC33395TDWBR2

NXP Semiconductors

IC GATE DRVR HALF-BRIDGE 32SOIC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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