PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
ADUM4221-1ARIZ-RL

ADUM4221-1ARIZ-RL

Analog Devices, Inc.

ISO 1/2 BRIDGE DRV W PWM UVLO 4.

0

TSC426EBA

TSC426EBA

Analog Devices, Inc.

TSC426 DUAL POWER MOSFET DRIVER

2513

MAX5057AASA

MAX5057AASA

Analog Devices, Inc.

DUAL MOSFET DRIVER

5125

LTC4444IMS8E#TRPBF

LTC4444IMS8E#TRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

0

MAX5057AASA+

MAX5057AASA+

Analog Devices, Inc.

DUAL MOSFET DRIVER

800

LTC1693-1IS8#TRPBF

LTC1693-1IS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR HI/LOW SIDE 8SOIC

2005

LT8672HMS#PBF

LT8672HMS#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 10MSOP

17

MAX4426CSA

MAX4426CSA

Analog Devices, Inc.

DUAL 1.5A MOSFET DRIVER

0

MAX15202ATE+T

MAX15202ATE+T

Analog Devices, Inc.

GATE DRIVERS INTUNE

7500

MAX15202ATE+

MAX15202ATE+

Analog Devices, Inc.

GATE DRIVERS INTUNE

0

ADP3419JRMZ-REEL-AD

ADP3419JRMZ-REEL-AD

Analog Devices, Inc.

DUAL BOOTSTRAPPED HIGH VOLTAGE M

0

MAX4420MJA

MAX4420MJA

Analog Devices, Inc.

6A SINGLE MOSFET DRIVER

0

MAX44270AUK+

MAX44270AUK+

Analog Devices, Inc.

DUAL 1.5A MOSFET DRIVER

2310

LTC7000MPMSE

LTC7000MPMSE

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

0

LTC1165CS8#TRPBF

LTC1165CS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

0

LTC1177ISW-5

LTC1177ISW-5

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 28SOIC

0

LTC1177CN-5

LTC1177CN-5

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 18DIP

0

LT1162IN

LT1162IN

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 24DIP

0

LTC4444EMS8E#WTRPBF

LTC4444EMS8E#WTRPBF

Analog Devices, Inc.

IC GATE DRVR HALF-BRIDGE 8MSOP

0

LTC1154CN8

LTC1154CN8

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8DIP

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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