PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LTC3900MPS8#TRPBF

LTC3900MPS8#TRPBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8SO

0

IR2301PBF

IR2301PBF

IR (Infineon Technologies)

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

2761

MCP14A0302T-E/MS

MCP14A0302T-E/MS

Roving Networks / Microchip Technology

IC GATE DRVR HI/LOW SIDE 8MSOP

2421

NCD57001FDWR2G

NCD57001FDWR2G

Sanyo Semiconductor/ON Semiconductor

ISOLATED HIGH CURRENT AND HIGH E

90018000

TC4426ACOA

TC4426ACOA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

89

1EDN7512BXTSA1

1EDN7512BXTSA1

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE SOT23-5

1926

IRS2302STRPBF

IRS2302STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

LM5111-1MX

LM5111-1MX

Texas Instruments

BUFFER/INVERTER PERIPHL DRIVER

17821

MIC4414YFT-T5

MIC4414YFT-T5

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 4TQFN

980

IRS2008MTRPBFAUMA1

IRS2008MTRPBFAUMA1

IR (Infineon Technologies)

IC 200V HALF BRIDGE GATE DRIVER

3000

IRS21064STRPBF

IRS21064STRPBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 14SOIC

2401

ADP3415LRM-REEL

ADP3415LRM-REEL

DUAL MOSFET DRIVER

3647

IXDI614YI

IXDI614YI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO263-5

988

IR25603SPBF-IR

IR25603SPBF-IR

HALF BRIDGE BASED PERIPHERAL DRI

3858

UC3708NG4

UC3708NG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

2DM180206CM

2DM180206CM

Tamura

IC GATE DRVR HALF-BRIDGE 0502

87

DGD2136S28-13

DGD2136S28-13

Zetex Semiconductors (Diodes Inc.)

IC GATE DRVR HALF-BRIDGE 28SO

1016693000

MAX15025DATB+T

MAX15025DATB+T

Analog Devices, Inc.

HIGH SINK CURRENT GATE DRIVER

5000

LMG1025QDEETQ1

LMG1025QDEETQ1

Texas Instruments

IC MOSFET GAN DRIVER 7A/5A 6-WSO

3273

MIC44F19YML-TR

MIC44F19YML-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8MLF

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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