PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
NCP81156MNTBG

NCP81156MNTBG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRV HALFBRDG/LO-SID 8DFN

30000

MCP14E8-E/SN

MCP14E8-E/SN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

253

EL7457CLZ-T13

EL7457CLZ-T13

Renesas Electronics America

BUFFER/INVERTER BASED MOSFET DRI

154336

L9380-LF

L9380-LF

STMicroelectronics

IC GATE DRVR HIGH-SIDE 20SO

0

DGD0216WT-7

DGD0216WT-7

Zetex Semiconductors (Diodes Inc.)

IC GATE DRVR LOW-SIDE TSOT25

899

LM5112MY

LM5112MY

BUFFER/INVERTER BASED MOSFET DRI

7750

NCP4429DR2

NCP4429DR2

BUFFER/INVERTER MOSFET DRIVER

28121

HIP4086AP

HIP4086AP

Intersil (Renesas Electronics America)

80V, 0.5A THREE PHASE DRIVER

8631

IRS21814PBF

IRS21814PBF

IR (Infineon Technologies)

IRS21814 - GATE DRIVER

10050

MC34152DG

MC34152DG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR LOW-SIDE 8SOIC

304

ADP3624ARHZ

ADP3624ARHZ

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8MSOP

450

ADP3110AKRZ-RL

ADP3110AKRZ-RL

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HALF-BRIDGE 8SOIC

19

TC4424AVMF713

TC4424AVMF713

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DFN

0

HIP6602ACR

HIP6602ACR

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER

960

MAX4428ESA+

MAX4428ESA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

75

LM5104SDX/NOPB

LM5104SDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

IR2301STRPBF

IR2301STRPBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 8SOIC

26

LM5060Q1MM/NOPB

LM5060Q1MM/NOPB

Texas Instruments

LM5060-Q1 HIGH-SIDE PROTECTION C

889

LMG1205YFXR

LMG1205YFXR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 12DSBGA

52676

LTC4441IMSE#PBF

LTC4441IMSE#PBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 10MSOP

1

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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