PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
TC4404EPA

TC4404EPA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

195

R2J20658BNP#G0

R2J20658BNP#G0

Renesas Electronics America

HALF BRIDGE BASED MOSFET DRIVER

170000

MIC4427ZN

MIC4427ZN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

583

LTC1155IS8#PBF

LTC1155IS8#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 8SOIC

600

MAX4426CPA+

MAX4426CPA+

Maxim Integrated

IC GATE DRVR LOW-SIDE 8DIP

4400

IR21844PBF

IR21844PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

285

MAX4429ESA

MAX4429ESA

Analog Devices, Inc.

MOSFET DRIVER

0

ADP3118JRZ

ADP3118JRZ

Analog Devices, Inc.

DUAL MOSFET DRIVER

392

IR2110SPBF

IR2110SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16SOIC

0

IXDI609CI

IXDI609CI

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE TO220-5

895

MP1924HR-LF-P

MP1924HR-LF-P

MPS (Monolithic Power Systems)

IC GATE DRVR HALF-BRIDGE 10QFN

0

MD1810K6-G

MD1810K6-G

Roving Networks / Microchip Technology

IC GATE DRVR HALF-BRIDGE 16QFN

2127

LTC7000HMSE#PBF

LTC7000HMSE#PBF

Analog Devices, Inc.

IC GATE DRVR HIGH-SIDE 16MSOP

8

MCP14A0453T-E/SN

MCP14A0453T-E/SN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

3020

MIC4425YWM-TR

MIC4425YWM-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 16SOIC

0

MIC5020YM-TR

MIC5020YM-TR

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

2319

MIC4421ZT

MIC4421ZT

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE TO220-5

167

MIC4422AYN

MIC4422AYN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

44

TC4404COA

TC4404COA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

0

TPS2811QPWRQ1

TPS2811QPWRQ1

Texas Instruments

TPS2811 INVERTING DUAL HIGH-SPEE

5995

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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