Memory

Image	Part Number	Description / PDF	Quantity	Rfq
	NM27C256QE150 Sanyo Semiconductor/ON Semiconductor	IC EPROM 256KBIT PARALLEL 28CDIP	0
	NMC27C64Q150 Sanyo Semiconductor/ON Semiconductor	IC EPROM 64KBIT PARALLEL 28CDIP	0
	CAT24C32HU3I-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 32KBIT I2C 1MHZ 8UDFN	0
	CAT28C16AWI12 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT PARALLEL 24SOIC	0
	CAT28F010H-12T Sanyo Semiconductor/ON Semiconductor	IC FLASH 1MBIT PARALLEL 32TSOP	0
	CAT28C256H13I15 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT PAR 28TSOP	0
	CAT28F001GI-12B Sanyo Semiconductor/ON Semiconductor	IC FLASH 1MBIT PARALLEL 32PLCC	0
	NM27C010T90 Sanyo Semiconductor/ON Semiconductor	IC EPROM 1MBIT PARALLEL 32TSOP	0
	CAT28F010L90 Sanyo Semiconductor/ON Semiconductor	IC FLASH 1MBIT PARALLEL 32DIP	0
	NM24C02M8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT I2C 100KHZ 8SOIC	0
	NM27C128Q150 Sanyo Semiconductor/ON Semiconductor	IC EPROM 128KBIT PARALLEL 28CDIP	0
	CAT28C256L12 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KBIT PARALLEL 28DIP	0
	CAT28F020G90 Sanyo Semiconductor/ON Semiconductor	IC FLASH 2MBIT PARALLEL 32PLCC	0
	CAT28C16AGI12 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT PARALLEL 32PLCC	0
	NM27C010QE120 Sanyo Semiconductor/ON Semiconductor	IC EPROM 1MBIT PARALLEL 32CDIP	0
	CAT28C64BH13I12T Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 28TSOP	0
	CAT25256VE-GT3C Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256KB SER SPI 8SOIC	0
	CAT28LV64WI25 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 28SOIC	0
	NM93C06LEN Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256B SPI 250KHZ 8DIP	0
	CAT28LV65WI25 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 28SOIC	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)