Memory

Part Number	Description / PDF	Quantity
CAT28C64BGI12 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 32PLCC	0
NM93CS66M Sanyo Semiconductor/ON Semiconductor	IC EEPROM 4KBIT SPI 1MHZ 14SOIC	0
NM93CS06N Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256B SPI 1MHZ 8DIP	0
NM27C256QE120 Sanyo Semiconductor/ON Semiconductor	IC EPROM 256KBIT PARALLEL 28CDIP	0
CAT93C46BXI-T2 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 4MHZ 8SOIC	42000
NM93C14M8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 1MHZ 8SO	0
NM24C02EM8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT I2C 100KHZ 8SOIC	0
N01L63W2AB25I Sanyo Semiconductor/ON Semiconductor	IC SRAM 1MBIT PARALLEL 48BGA	0
CAT24C164WI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT I2C 8SOIC	0
FM93C56N Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT SPI 1MHZ 8DIP	0
NM93C46EM8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 1MHZ 8SO	0
NM93C13M8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256B SPI 1MHZ 8SO	0
CAT93C57XI Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT SPI 1MHZ 8SOIC	0
NM93CS46LEN Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 250KHZ 8DIP	0
CAT93C76BYI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 8KBIT SPI 4MHZ 8TSSOP	0
NM93C06M8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256B SPI 1MHZ 8SOIC	0
NM27C020V150 Sanyo Semiconductor/ON Semiconductor	IC EPROM 2MBIT PARALLEL 32PLCC	0
NM93C46M8X Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 1MHZ 8SO	0
CAT28C16AL20 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT PARALLEL 24DIP	0
FM27C512Q150 Sanyo Semiconductor/ON Semiconductor	IC EPROM 512KBIT PARALLEL 28CDIP	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)