Memory

Image Part Number Description / PDF Quantity Rfq
MT29F2G08ABAEAH4-AATX:E TR

MT29F2G08ABAEAH4-AATX:E TR

Micron Technology

IC FLASH 2GBIT PARALLEL 63VFBGA

1457

MT25QU128ABA8ESF-0AAT TR

MT25QU128ABA8ESF-0AAT TR

Micron Technology

IC FLASH 128MBIT SPI 133MHZ 16SO

0

MT28EW256ABA1HPC-0SIT TR

MT28EW256ABA1HPC-0SIT TR

Micron Technology

IC FLASH 256MBIT PARALLEL 64LBGA

0

MT29F1T08EEHAFJ4-3R:A

MT29F1T08EEHAFJ4-3R:A

Micron Technology

IC FLASH 1TB PARALLEL 132VBGA

0

MT25QU01GBBB8E12-0AAT TR

MT25QU01GBBB8E12-0AAT TR

Micron Technology

IC FLSH 1GBIT SPI 133MHZ 24TPBGA

0

MT29AZ5A3CHHWD-18AAT.84F

MT29AZ5A3CHHWD-18AAT.84F

Micron Technology

IC FLASH RAM 4GBIT PAR 162VFBGA

0

MT55V512V32PT-7.5

MT55V512V32PT-7.5

Micron Technology

IC SRAM 18MBIT PARALLEL 100TQFP

551

MT46V128M4TG-6T:D TR

MT46V128M4TG-6T:D TR

Micron Technology

IC DRAM 512MBIT PARALLEL 66TSOP

14

MT25QL01GBBB8ESF-0AAT

MT25QL01GBBB8ESF-0AAT

Micron Technology

IC FLASH 1GBIT SPI 133MHZ 16SO

0

MT28EW01GABA1LPC-0SIT TR

MT28EW01GABA1LPC-0SIT TR

Micron Technology

IC FLASH 1GBIT PARALLEL 64LBGA

0

MT25QL512ABB8E12-0AAT TR

MT25QL512ABB8E12-0AAT TR

Micron Technology

IC FLASH 512MBIT SPI 24TPBGA

0

MT29F1G08ABAFAWP-AAT:F TR

MT29F1G08ABAFAWP-AAT:F TR

Micron Technology

IC FLASH 1GBIT PARALLEL 48TSOP I

0

MT29F2G08ABAEAWP-ITX:E TR

MT29F2G08ABAEAWP-ITX:E TR

Micron Technology

IC FLASH 2GBIT PARALLEL 48TSOP I

505

MT49H32M18CSJ-18:B TR

MT49H32M18CSJ-18:B TR

Micron Technology

IC DRAM 576MBIT PARALLEL 144FBGA

0

MT48H32M16LFB4-6 IT:C TR

MT48H32M16LFB4-6 IT:C TR

Micron Technology

IC DRAM 512MBIT PARALLEL 54VFBGA

1513

MT29F4G08ABADAH4-AITX:D TR

MT29F4G08ABADAH4-AITX:D TR

Micron Technology

IC FLASH 4GBIT PARALLEL 63VFBGA

343

MT29RZ4B4DZZMGWD-18I.80C TR

MT29RZ4B4DZZMGWD-18I.80C TR

Micron Technology

IC FLASH RAM 4G PAR 162VFBGA

995

MT58L128L36P1F-5

MT58L128L36P1F-5

Micron Technology

IC SRAM 4MBIT PARALLEL 165FBGA

416

MT46H128M16LFDD-48 IT:C TR

MT46H128M16LFDD-48 IT:C TR

Micron Technology

IC DRAM 2GBIT PARALLEL 60VFBGA

3556

MT41K256M8DA-125 AIT:K TR

MT41K256M8DA-125 AIT:K TR

Micron Technology

IC DRAM 2GBIT PARALLEL 78FBGA

1785

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
DRAM (Dynamic RAM)High-density, low-cost, requires periodic refreshPCs, Servers, Graphics Cards
NAND FlashNon-volatile, high endurance, block-level accessSSDs, USB Drives, Mobile Storage
SRAM (Static RAM)High-speed, low density, no refresh requiredCache Memory, Networking Equipment
NOR FlashRandom access, execute-in-place capabilityEmbedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)Non-volatile, unlimited endurance, low powerIoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

  • Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
  • Address Decoder: Selects specific memory locations
  • I/O Circuits: Data input/output interfaces
  • Control Logic: Manages read/write operations and timing
  • Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

ParameterDescriptionImportance
Storage CapacityData volume (Gb/GiB)Determines system memory limits
Access Timens/predictable latencyImpacts processing speed
Power ConsumptionmW/MHzAffects battery life and thermal design
EnduranceP/E cycles (Flash)Dictates product lifespan
Data RetentionYears (non-volatile)Critical for long-term storage

5. Application Areas

  • Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
  • Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
  • Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
  • Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

ManufacturerRepresentative Products
Samsung ElectronicsV-NAND (9x-layer), LPDDR5X
SK hynixHBM3 (8GB/s bandwidth), GDDR6
Microchip TechnologySerial NOR Flash (SST26)
Kioxia CorporationBiCS FLASH (3D NAND)
Infineon TechnologiesMRAM (40nm process)

7. Selection Recommendations

Key considerations:

  • Match memory type to application requirements (e.g., NOR Flash for code storage)
  • Evaluate bandwidth vs. latency tradeoffs
  • Analyze temperature and vibration specifications
  • Assess long-term supply stability
  • Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

  • 3D NAND scaling beyond 200 layers
  • Emerging memories (ReRAM, PCM) for AI acceleration
  • Package-on-Package (PoP) integration
  • AI-optimized memory architectures (Processing-in-Memory)
  • Green manufacturing processes (EUV lithography)
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