Memory

Part Number	Description / PDF	Quantity
MT28EW128ABA1LPC-0SIT Micron Technology	IC FLASH 128MBIT PARALLEL 64LBGA	9
MT47H256M4HQ-5E:E TR Micron Technology	IC DRAM 1GBIT PARALLEL 60FBGA	900
MT55L256L32PF-10 Micron Technology	ZBT SRAM, 256KX32, 5NS, CMOS, PB	240
MT58L32L32PT-10 Micron Technology	IC SRAM 1MBIT PARALLEL 100TQFP	28461
MT58L256L36FS-10 Micron Technology	CACHE SRAM 256KX36 10NS PQFP100	15688
MT53E384M32D2DS-053 AIT:E TR Micron Technology	IC DRAM 12GBIT 1.866GHZ 200WFBGA	0
MTFC64GAPALBH-AAT TR Micron Technology	IC FLASH 512GBIT MMC 153TFBGA	0
MT28EW01GABA1HPC-0SIT TR Micron Technology	IC FLASH 1GBIT PARALLEL 64LBGA	0
MTFC8GAMALBH-AAT TR Micron Technology	IC FLASH 64GBIT MMC 153TFBGA	0
MT29F1T08EEHAFJ4-3T:A TR Micron Technology	IC FLASH 1TB PARALLEL 132VBGA	0
MT29F4G08ABADAWP:D TR Micron Technology	IC FLASH 4GBIT PARALLEL 48TSOP I	1615
MT41J256M8DA-125:K TR Micron Technology	IC DRAM 2GBIT PARALLEL 78FBGA	0
MT58V512V36FT-8.5 Micron Technology	CACHE SRAM, 512KX36, 8.5NS PQFP1	580
MT55L256L18P1T-7.5 Micron Technology	ZBT SRAM, 256KX18, 4.2NS PQFP100	392
MT48LC4M32B2P-6A AAT:L TR Micron Technology	IC DRAM 128MBIT PAR 86TSOP II	955
MT53E384M32D2DS-053 AUT:E Micron Technology	IC DRAM 12GBIT 1.866GHZ 200WFBGA	0
MT41K512M8DA-107:P TR Micron Technology	IC DRAM 4GBIT PARALLEL 78FBGA	0
MT58L64L32PT-7.5 Micron Technology	IC SRAM 2MBIT PARALLEL 100TQFP	13419
MT28FW02GBBA1HPC-0AAT Micron Technology	IC FLASH 2GBIT PARALLEL 64LBGA	0
MT58L128L32F1T-6.8 Micron Technology	IC SRAM 4MBIT PARALLEL 100TQFP	732

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)