Memory

Part Number	Description / PDF	Quantity
24LC08BHT-I/MS Roving Networks / Microchip Technology	IC EEPROM 8KBIT I2C 400KHZ 8MSOP	0
SST25VF010A-33-4C-QAE Roving Networks / Microchip Technology	IC FLASH 1MBIT SPI 33MHZ 8WSON	0
93C56CT-I/MNY Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 3MHZ 8TDFN	0
24VL024HT/MNY Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8TDFN	0
93AA56A-I/P Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 2MHZ 8DIP	306
24AA02HT-I/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8SOIC	0
AT24C04C-PUM Roving Networks / Microchip Technology	IC EEPROM 4KBIT I2C 1MHZ 8DIP	1025
93LC56C-E/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 3MHZ 8SOIC	1180
24LC32AT-E/SN Roving Networks / Microchip Technology	IC EEPROM 32KBIT I2C 8SOIC	933
SST26VF064BT-104I/TD Roving Networks / Microchip Technology	IC FLASH 64MBIT SPI/QUAD 24TBGA	0
SST39WF800B-70-4C-MAQE Roving Networks / Microchip Technology	IC FLASH 8MBIT PARALLEL 48WFBGA	0
93AA66-I/P Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 2MHZ 8DIP	0
AT24MAC602-XHM-T Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 1MHZ 8TSSOP	1581
24LC04BHT-E/MS Roving Networks / Microchip Technology	IC EEPROM 4KBIT I2C 400KHZ 8MSOP	0
AT93C46E-PU Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 2MHZ 8DIP	0
AT25010B-MAHL-T Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 20MHZ 8UDFN	4369
SST38VF6404B-70I/TV Roving Networks / Microchip Technology	IC FLASH 64MBIT PARALLEL 48TSOP	33
23LC512-I/P Roving Networks / Microchip Technology	IC SRAM 512KBIT SPI/QUAD 8DIP	275
93AA56BT-I/ST Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 2MHZ 8TSSOP	0
93AA86T/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 3MHZ 8SOIC	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)