Memory

Part Number	Description / PDF	Quantity
AT24C01C-MAHM-E Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C 1MHZ 8UDFN	13266
SST26WF016BT-104I/MF Roving Networks / Microchip Technology	IC FLASH 16MBIT SPI/QUAD 8WDFN	0
25LC020AT-E/MC Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 10MHZ 8DFN	3300
25AA320AT-I/MNY Roving Networks / Microchip Technology	IC EEPROM 32KBIT SPI 10MHZ 8TDFN	267
93LC66B/P Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 2MHZ 8DIP	227
25LC256X-I/ST Roving Networks / Microchip Technology	IC EEPROM 256KBIT SPI 8TSSOP	0
AT28HC256E-12TU-T Roving Networks / Microchip Technology	IC EEPROM 256KBIT PAR 28TSSOP	0
25AA160DT-I/MS Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 10MHZ 8MSOP	0
24C01C-E/MS Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C 100KHZ 8MSOP	0
SST39VF3201B-70-4C-EKE Roving Networks / Microchip Technology	IC FLASH 32MBIT PARALLEL 48TSOP	314
AT24C04D-SSHM-T Roving Networks / Microchip Technology	IC EEPROM 4KBIT I2C 1MHZ 8SOIC	809
AT28LV010-20JU-630 Roving Networks / Microchip Technology	IC EEPROM 1MBIT PARALLEL 32PLCC	550
93AA86BT-I/OT Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI SOT23-6	5393
24LC04BT-E/ST Roving Networks / Microchip Technology	IC EEPROM 4KBIT I2C 8TSSOP	0
SST39WF800B-70-4C-B3KE Roving Networks / Microchip Technology	IC FLASH 8MBIT PARALLEL 48TFBGA	0
25AA640A-E/MS Roving Networks / Microchip Technology	IC EEPROM 64KBIT SPI 10MHZ 8MSOP	0
24LC014T-I/SN Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C 400KHZ 8SOIC	2600
93AA76BT-I/OT Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 3MHZ SOT23-6	3479
25AA160BT-I/ST Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 8TSSOP	0
93C46A-E/ST Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 2MHZ 8TSSOP	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)