Memory

Part Number	Description / PDF	Quantity
24C65-I/SM Roving Networks / Microchip Technology	IC EEPROM 64KBIT I2C 8SOIJ	354
93C76-E/P Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 2MHZ 8DIP	0
24AA65/SM Roving Networks / Microchip Technology	IC EEPROM 64KBIT I2C 8SOIJ	0
93LC76C-I/ST Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 3MHZ 8TSSOP	1250
24AA32AFT-I/OT Roving Networks / Microchip Technology	IC EEPROM 32KBIT I2C SOT23-5	8378
SST39VF010-70-4C-WHE Roving Networks / Microchip Technology	IC FLASH 1MBIT PARALLEL 32TSOP	844
24LC02BT/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8SOIC	873
25LC128XT-E/ST Roving Networks / Microchip Technology	IC EEPROM 128KBIT SPI 8TSSOP	0
SST39VF1602C-70-4I-MAQE Roving Networks / Microchip Technology	IC FLASH 16MBIT PARALLEL 48WFBGA	0
24AA04-I/MS Roving Networks / Microchip Technology	IC EEPROM 4KBIT I2C 400KHZ 8MSOP	658
24LC02B-E/MS Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8MSOP	0
AT93C46DY6-YH-E Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 2MHZ 8UDFN	25026
93LC76-I/P Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 3MHZ 8DIP	0
93LC76BT-E/SN Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 3MHZ 8SOIC	0
93AA56B-I/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 2MHZ 8SOIC	0
AT93C56B-SSHM-T Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 2MHZ 8SOIC	4048
AT24C32E-PUM Roving Networks / Microchip Technology	IC EEPROM 32KBIT I2C 1MHZ 8DIP	1324
25LC080AT-E/SN Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 10MHZ 8SOIC	0
AT24C32D-MAHM-T Roving Networks / Microchip Technology	IC EEPROM 32KBIT I2C 8MINI MAP	1058
24AA02HT-I/OT Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C SOT23-5	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)