Memory

Part Number	Description / PDF	Quantity
93AA86C-I/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 3MHZ 8SOIC	604
24LC64-E/SM Roving Networks / Microchip Technology	IC EEPROM 64KBIT I2C 8SOIJ	0
25LC640AT-E/ST Roving Networks / Microchip Technology	IC EEPROM 64KBIT SPI 8TSSOP	1778
23A512-E/SN Roving Networks / Microchip Technology	IC SRAM 512KBIT SPI/QUAD 8SOIC	0
93C66C-I/P Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 3MHZ 8DIP	1069
25LC128T-E/MF Roving Networks / Microchip Technology	IC EEPROM 128KBIT SPI 10MHZ 8DFN	0
SST39VF1681-70-4I-EKE Roving Networks / Microchip Technology	IC FLASH 16MBIT PARALLEL 48TSOP	389
AT28C010-15JU-T Roving Networks / Microchip Technology	IC EEPROM 1MBIT PARALLEL 32PLCC	750
AT27C512R-45JU-T Roving Networks / Microchip Technology	IC EPROM 512KBIT PARALLEL 32PLCC	326
AT24C08C-STUM-T Roving Networks / Microchip Technology	IC EEPROM 8KBIT I2C 1MHZ SOT23-5	6826
AT27C512R-70PU Roving Networks / Microchip Technology	IC EPROM 512KBIT PARALLEL 28DIP	12229
24LC1026-I/SM Roving Networks / Microchip Technology	IC EEPROM 1MBIT I2C 400KHZ 8SOIJ	16
SST25VF020B-80-4C-Q3AE-T Roving Networks / Microchip Technology	IC FLASH 2MBIT SPI 80MHZ 8USON	0
SST39VF1681-70-4I-EKE-T Roving Networks / Microchip Technology	IC FLASH 16MBIT PARALLEL 48TSOP	0
24FC08T-I/ST Roving Networks / Microchip Technology	IC EEPROM 8KBIT I2C 1MHZ 8TSSOP	0
24LC08BT-I/MC Roving Networks / Microchip Technology	IC EEPROM 8KBIT I2C 400KHZ 8DFN	0
25C160T/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 3MHZ 8SOIC	0
AT24C32D-XHM-B Roving Networks / Microchip Technology	IC EEPROM 32KBIT I2C 1MHZ 8TSSOP	1319
SST39VF3201B-70-4I-EKE-T Roving Networks / Microchip Technology	IC FLASH 32MBIT PARALLEL 48TSOP	0
25AA080B-I/P Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 10MHZ 8DIP	506

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)