Memory

Part Number	Description / PDF	Quantity
BR24G04FV-3GTE2 ROHM Semiconductor	IC EEPROM 4KBIT I2C 8SSOPB	2444
BU9833GUL-WE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C VCSP50L1	0
BR24G128FVM-3GTTR ROHM Semiconductor	IC EEPROM 128K I2C 400KHZ 8MSOP	2548
BR24T64F-WE2 ROHM Semiconductor	IC EEPROM 64KBIT I2C 400KHZ 8SOP	96
BR93G46F-3AGTE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 3MHZ 8SOP	1429
BR25H040F-2LBH2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 10MHZ 8SOP	205
BR24S64FVJ-WE2 ROHM Semiconductor	IC EEPROM 64KBIT I2C 8TSSOP	0
BR24L01AFJ-WE2 ROHM Semiconductor	IC EEPROM 1K I2C 400KHZ 8SOPJ	3
BR24H32FJ-5ACE2 ROHM Semiconductor	125 OPERATION, SOP-J8 PACAKGE, I	0
BR24G16NUX-3ATTR ROHM Semiconductor	IC EEPROM 16KBIT VSON008X2030	0
BR24G04FVJ-3AGTE2 ROHM Semiconductor	IC EEPROM 4K I2C 1MHZ 8TSSOP	2388
BR25G640NUX-3TR ROHM Semiconductor	IC EEPROM 64KBIT VSON008X2030	2780
BR93A76RFVT-WME2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 2MHZ 8TSSOPB	3000
BR25160-10TU-2.7 ROHM Semiconductor	IC EEPROM 16KBIT SPI 3MHZ 8TSSOP	0
BR24T1MF-3AME2 ROHM Semiconductor	IC EEPROM 1MBIT I2C 1MHZ 8SOP	2411
BR25H320FVM-2CTR ROHM Semiconductor	IC EEPROM 32KBIT SPI 10MHZ 8MSOP	2994
BR93L46RFV-WE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 2MHZ 8SSOPB	1978
BR24C04-RDW6TP ROHM Semiconductor	IC EEPROM 4KBIT I2C 8TSSOP	0
BR24S128FJ-WE2 ROHM Semiconductor	IC EEPROM 128K I2C 400KHZ 8SOPJ	1308
BR24G32FV-3AGTE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 1MHZ 8SSOPB	2415

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)